Electrical characterization of GaAs/Al0.30Ga0.70As p+-n heterojunctions grown by metalorganic vapor phase epitaxy

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Bibliographic Details
Published in:Journal of applied physics 1989, Vol.65 (12), p.4928-4935
Main Authors: TISCHLER, M. A, BARATTE, H, KUECH, T. F, WANG, P. J
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Electronic transport in interface structures
Exact sciences and technology
Physics
Online Access:Get full text
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ISSN:0021-8979
1089-7550