Transient charging and discharging behaviors of border traps in the dual-layer HfO2/SiO2 high-k gate stack observed by using low-frequency charge pumping method

Saved in:
Bibliographic Details
Published in:IEEE transactions on electron devices 2007-06, Vol.54 (6), p.1330-1337
Main Authors: WU, Wei-Hao, TSUI, Bing-Yue, CHEN, Mao-Chieh, HOU, Yong-Tian, YIN JIN, TAO, Hun-Jan, CHEN, Shih-Chang, LIANG, Mong-Song
Format: Article
Language:English
Subjects:
Applied sciences
Compound structure devices
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2007.895864