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V-Band GaAs pHEMT Cross-Coupled Sub-Harmonic Oscillator
A V-band cross-coupled sub-harmonic injection-locked oscillator has been designed and fabricated using 0.15-mum GaAs pHMET technology. Based on the known harmonic injecting circuit topology, this oscillator was designed by a differential output approach, a low-Q microstrip-line resonator, and a curr...
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| Published in: | IEEE microwave and wireless components letters 2006-08, Vol.16 (8), p.473-475 |
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| Main Authors: | , , |
| Format: | Article |
| Language: | English |
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| cited_by | cdi_FETCH-LOGICAL-c419t-e16c0f01c83ff7f73a33155361882de35d58d5628494af576dc4f5f80297ea023 |
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| cites | cdi_FETCH-LOGICAL-c419t-e16c0f01c83ff7f73a33155361882de35d58d5628494af576dc4f5f80297ea023 |
| container_end_page | 475 |
| container_issue | 8 |
| container_start_page | 473 |
| container_title | IEEE microwave and wireless components letters |
| container_volume | 16 |
| creator | HUANG, Fan-Hsiu LIN, Cheng-Kuo CHAN, Yi-Jen |
| description | A V-band cross-coupled sub-harmonic injection-locked oscillator has been designed and fabricated using 0.15-mum GaAs pHMET technology. Based on the known harmonic injecting circuit topology, this oscillator was designed by a differential output approach, a low-Q microstrip-line resonator, and a current mirror, which has a free-running oscillation frequency around 60GHz with a tuning range of 2.5GHz (from 57.8GHz to 60.3GHz). The maximum single-end output power is 3.8dBm with a dc dissipation of 225mW under a -3V supply voltage. Within the input matching network for second (30GHz) and fourth (15GHz) sub-harmonic signals injection, it demonstrates the maximum locking ranges close to 120MHz and 30MHz, respectively |
| doi_str_mv | 10.1109/LMWC.2006.879479 |
| format | article |
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Based on the known harmonic injecting circuit topology, this oscillator was designed by a differential output approach, a low-Q microstrip-line resonator, and a current mirror, which has a free-running oscillation frequency around 60GHz with a tuning range of 2.5GHz (from 57.8GHz to 60.3GHz). The maximum single-end output power is 3.8dBm with a dc dissipation of 225mW under a -3V supply voltage. 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(IEEE) 2006</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c419t-e16c0f01c83ff7f73a33155361882de35d58d5628494af576dc4f5f80297ea023</citedby><cites>FETCH-LOGICAL-c419t-e16c0f01c83ff7f73a33155361882de35d58d5628494af576dc4f5f80297ea023</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1661648$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>315,786,790,27957,27958,55147</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=18000533$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>HUANG, Fan-Hsiu</creatorcontrib><creatorcontrib>LIN, Cheng-Kuo</creatorcontrib><creatorcontrib>CHAN, Yi-Jen</creatorcontrib><title>V-Band GaAs pHEMT Cross-Coupled Sub-Harmonic Oscillator</title><title>IEEE microwave and wireless components letters</title><addtitle>LMWC</addtitle><description>A V-band cross-coupled sub-harmonic injection-locked oscillator has been designed and fabricated using 0.15-mum GaAs pHMET technology. Based on the known harmonic injecting circuit topology, this oscillator was designed by a differential output approach, a low-Q microstrip-line resonator, and a current mirror, which has a free-running oscillation frequency around 60GHz with a tuning range of 2.5GHz (from 57.8GHz to 60.3GHz). The maximum single-end output power is 3.8dBm with a dc dissipation of 225mW under a -3V supply voltage. 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(IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>7QQ</scope><scope>F28</scope><scope>FR3</scope><scope>JG9</scope></search><sort><creationdate>20060801</creationdate><title>V-Band GaAs pHEMT Cross-Coupled Sub-Harmonic Oscillator</title><author>HUANG, Fan-Hsiu ; LIN, Cheng-Kuo ; CHAN, Yi-Jen</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c419t-e16c0f01c83ff7f73a33155361882de35d58d5628494af576dc4f5f80297ea023</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2006</creationdate><topic>Applied sciences</topic><topic>Circuit design</topic><topic>Circuit optimization</topic><topic>Circuit properties</topic><topic>Circuit topology</topic><topic>Cross-coupled oscillator</topic><topic>Current mirrors</topic><topic>Electric, optical and optoelectronic circuits</topic><topic>Electronic circuits</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Frequency</topic><topic>GaAs pseudomorphic high electron mobility transistor (pHEMT)</topic><topic>Gallium arsenide</topic><topic>Gallium arsenides</topic><topic>Injection-locked oscillators</topic><topic>Microstrip resonators</topic><topic>Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits</topic><topic>Mirrors</topic><topic>Oscillations</topic><topic>Oscillators</topic><topic>Oscillators, resonators, synthetizers</topic><topic>PHEMTs</topic><topic>Power generation</topic><topic>sub-harmonic injection-locked oscillator</topic><topic>Tuning</topic><topic>Voltage</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>HUANG, Fan-Hsiu</creatorcontrib><creatorcontrib>LIN, Cheng-Kuo</creatorcontrib><creatorcontrib>CHAN, Yi-Jen</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998–Present</collection><collection>IEEE Xplore</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Ceramic Abstracts</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>Materials Research Database</collection><jtitle>IEEE microwave and wireless components letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>HUANG, Fan-Hsiu</au><au>LIN, Cheng-Kuo</au><au>CHAN, Yi-Jen</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>V-Band GaAs pHEMT Cross-Coupled Sub-Harmonic Oscillator</atitle><jtitle>IEEE microwave and wireless components letters</jtitle><stitle>LMWC</stitle><date>2006-08-01</date><risdate>2006</risdate><volume>16</volume><issue>8</issue><spage>473</spage><epage>475</epage><pages>473-475</pages><issn>1531-1309</issn><issn>2771-957X</issn><eissn>1558-1764</eissn><eissn>2771-9588</eissn><coden>IMWCBJ</coden><notes>ObjectType-Article-1</notes><notes>SourceType-Scholarly Journals-1</notes><notes>ObjectType-Feature-2</notes><notes>content type line 23</notes><abstract>A V-band cross-coupled sub-harmonic injection-locked oscillator has been designed and fabricated using 0.15-mum GaAs pHMET technology. Based on the known harmonic injecting circuit topology, this oscillator was designed by a differential output approach, a low-Q microstrip-line resonator, and a current mirror, which has a free-running oscillation frequency around 60GHz with a tuning range of 2.5GHz (from 57.8GHz to 60.3GHz). The maximum single-end output power is 3.8dBm with a dc dissipation of 225mW under a -3V supply voltage. Within the input matching network for second (30GHz) and fourth (15GHz) sub-harmonic signals injection, it demonstrates the maximum locking ranges close to 120MHz and 30MHz, respectively</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/LMWC.2006.879479</doi><tpages>3</tpages></addata></record> |
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| identifier | ISSN: 1531-1309 |
| ispartof | IEEE microwave and wireless components letters, 2006-08, Vol.16 (8), p.473-475 |
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| language | eng |
| recordid | cdi_pascalfrancis_primary_18000533 |
| source | IEEE Electronic Library (IEL) Journals |
| subjects | Applied sciences Circuit design Circuit optimization Circuit properties Circuit topology Cross-coupled oscillator Current mirrors Electric, optical and optoelectronic circuits Electronic circuits Electronics Exact sciences and technology Frequency GaAs pseudomorphic high electron mobility transistor (pHEMT) Gallium arsenide Gallium arsenides Injection-locked oscillators Microstrip resonators Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits Mirrors Oscillations Oscillators Oscillators, resonators, synthetizers PHEMTs Power generation sub-harmonic injection-locked oscillator Tuning Voltage |
| title | V-Band GaAs pHEMT Cross-Coupled Sub-Harmonic Oscillator |
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