V-Band GaAs pHEMT Cross-Coupled Sub-Harmonic Oscillator

A V-band cross-coupled sub-harmonic injection-locked oscillator has been designed and fabricated using 0.15-mum GaAs pHMET technology. Based on the known harmonic injecting circuit topology, this oscillator was designed by a differential output approach, a low-Q microstrip-line resonator, and a curr...

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Bibliographic Details
Published in:IEEE microwave and wireless components letters 2006-08, Vol.16 (8), p.473-475
Main Authors: HUANG, Fan-Hsiu, LIN, Cheng-Kuo, CHAN, Yi-Jen
Format: Article
Language:English
Subjects:
Applied sciences
Circuit design
Circuit optimization
Circuit properties
Circuit topology
Cross-coupled oscillator
Current mirrors
Electric, optical and optoelectronic circuits
Electronic circuits
Electronics
Exact sciences and technology
Frequency
GaAs pseudomorphic high electron mobility transistor (pHEMT)
Gallium arsenide
Gallium arsenides
Injection-locked oscillators
Microstrip resonators
Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits
Mirrors
Oscillations
Oscillators
Oscillators, resonators, synthetizers
PHEMTs
Power generation
sub-harmonic injection-locked oscillator
Tuning
Voltage
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Summary:A V-band cross-coupled sub-harmonic injection-locked oscillator has been designed and fabricated using 0.15-mum GaAs pHMET technology. Based on the known harmonic injecting circuit topology, this oscillator was designed by a differential output approach, a low-Q microstrip-line resonator, and a current mirror, which has a free-running oscillation frequency around 60GHz with a tuning range of 2.5GHz (from 57.8GHz to 60.3GHz). The maximum single-end output power is 3.8dBm with a dc dissipation of 225mW under a -3V supply voltage. Within the input matching network for second (30GHz) and fourth (15GHz) sub-harmonic signals injection, it demonstrates the maximum locking ranges close to 120MHz and 30MHz, respectively
ISSN:1531-1309
2771-957X
1558-1764
2771-9588
DOI:10.1109/LMWC.2006.879479