The study of sputtered RF Ta on the PID in Cu dual damascene technology [plasma induced damage]

Different recipes of barrier metal using a sputtered Ta process in 0.13 /spl mu/m dual gate oxide are developed. Low-throughput RF Ta, baseline Ta and high-throughput RF Ta have been simulated in the barrier metal sputtering process. The plasma charging damage is studied and gate leakage of related...

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Bibliographic Details
Main Authors: Wen Hui Lu, Kim Keng Teo, Chaw Sing Ho, Andrew, K.L.Y., Keng Foo Lo
Format: Conference Proceeding
Language:English
Subjects:
Antenna measurements
Applied sciences
CMOS technology
Copper
Electronics
Exact sciences and technology
Gate leakage
Microelectronic fabrication (materials and surfaces technology)
Plasma applications
Plasma devices
Plasma materials processing
Plasma measurements
Protection
Radio frequency
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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Summary:Different recipes of barrier metal using a sputtered Ta process in 0.13 /spl mu/m dual gate oxide are developed. Low-throughput RF Ta, baseline Ta and high-throughput RF Ta have been simulated in the barrier metal sputtering process. The plasma charging damage is studied and gate leakage of related antenna structures is measured on these processes. It is found that turning on RF Ta can reduce thick gate leakage of the antenna structures, and the best plasma induced damage (PID) performance comes from a low-throughput RF Ta recipe.
DOI:10.1109/IRWS.2004.1422763