Dual junction GaInP/GaAs solar cells grown on metamorphic SiGe/Si substrates with high open circuit voltage

Dual junction GaInP/GaAs solar cells have been grown and fabricated on Si substrates using relaxed, compositionally graded SiGe buffer layers that provide a nearly lattice-matched low threading dislocation Ge surface for subsequent cell growth. The dual junction cells on SiGe/Si displayed high open...

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Bibliographic Details
Published in:IEEE electron device letters 2006-03, Vol.27 (3), p.142-144
Main Authors: Lueck, M.R., Andre, C.L., Pitera, A.J., Lee, M.L., Fitzgerald, E.A., Ringel, S.A.
Format: Article
Language:English
Subjects:
Applied sciences
Circuits
Design. Technologies. Operation analysis. Testing
Dislocation
dual junction
Electronics
Energy
Exact sciences and technology
GaAs
GaInP
Gallium arsenide
Gallium arsenides
Germanium silicon alloys
heteroepitaxy
InGaP
Integrated circuits
integration
lattice-mismatch
Metamorphic
Natural energy
Open circuit voltage
Optoelectronic devices
photovoltaic
Photovoltaic cells
Photovoltaic conversion
Photovoltaic systems
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
SiGe
Silicon germanides
Silicon germanium
Silicon substrates
solar cell
Solar cells
Solar cells. Photoelectrochemical cells
Solar energy
Solar power generation
Space technology
Substrates
tandem
Threading dislocations
Voltage
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Description
Summary:Dual junction GaInP/GaAs solar cells have been grown and fabricated on Si substrates using relaxed, compositionally graded SiGe buffer layers that provide a nearly lattice-matched low threading dislocation Ge surface for subsequent cell growth. The dual junction cells on SiGe/Si displayed high open circuit voltages in excess of 2.2 V, compared to 2.34 V for control cells on GaAs, that are consistent with maintaining the 1.8/spl times/10/sup 6/ cm/sup -2/ threading dislocation density throughout the cell structure. Even with total current output limited by large grid coverage and high reflectance, total area AM1.5G efficiency is 16.8%, with active area efficiency at 18.6%. The high V/sub oc/ establishes that SiGe metamorphic buffers are viable for integrating III-V multijunction cells on Si in a monolithic process.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2006.870250