Low threshold InGaAsN/GaAs lasers beyond 1500 nm

GaAs-based InGaAsN quantum well films grown by molecular beam epitaxy are characterized by photoluminescence spectroscopy. InGaAsN with high N concentrations of about 4% requires a low growth temperature of 350 °C and minimal As flux. No indications for 3D growth are detected and carrier localizatio...

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Bibliographic Details
Published in:Journal of crystal growth 2005-05, Vol.278 (1), p.224-228
Main Authors: Jaschke, G., Averbeck, R., Geelhaar, L., Riechert, H.
Format: Article
Language:English
Subjects:
A3. Molecular beam epitaxy
A3. Quantum wells
B1. Arsenides
B1. Dilute nitrides
B2. Semiconducting quarternary alloys
B3. Laser diodes
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Iii-v semiconductors
Lasers
Materials science
Nanoscale materials and structures: fabrication and characterization
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Optics
Photoluminescence
Physics
Quantum wells
Semiconductor lasers
laser diodes
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Summary:GaAs-based InGaAsN quantum well films grown by molecular beam epitaxy are characterized by photoluminescence spectroscopy. InGaAsN with high N concentrations of about 4% requires a low growth temperature of 350 °C and minimal As flux. No indications for 3D growth are detected and carrier localization is below 25 meV. Broad area lasers with InGaAsN single quantum wells of different compositions are compared. Threshold current density correlates to room temperature photoluminescence intensity. For an emission wavelength of 1400 nm a threshold current density of 690 A/cm 2 is achieved with 1200 μm long devices. At 1510 nm a value of 780 A/cm 2 sets a new record for GaAs-based lasers with any kind of active material.
ISSN:0022-0248
1873-5002
DOI:10.1016/j.jcrysgro.2004.12.059