Oxygen-mediated Mn diffusion in magnetic tunnel junctions comprising a nano-oxide layer

Mn diffusion toward the tunnel barrier in the hard layer system of a magnetic tunnel junction is recognized as the limitation for the temperature stability. In a series of experiments, a nano-oxide layer (NOL) was included into the hard layer as a diffusion barrier. The tunnel magnetoresistance (TMR...

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Bibliographic Details
Published in:IEEE transactions on magnetics 2004-07, Vol.40 (4), p.2278-2280
Main Authors: Boeve, H., Vanhelmont, F., Zalm, P.C.
Format: Article
Language:English
Subjects:
Annealing
Antiferromagnetic materials
Atomic layer deposition
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Exact sciences and technology
Giant magnetoresistance
Magnetic analysis
Magnetic properties and materials
Magnetic tunneling
Magnetism
Physics
Plasma temperature
Random access memory
Stability
Tunneling magnetoresistance
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Summary:Mn diffusion toward the tunnel barrier in the hard layer system of a magnetic tunnel junction is recognized as the limitation for the temperature stability. In a series of experiments, a nano-oxide layer (NOL) was included into the hard layer as a diffusion barrier. The tunnel magnetoresistance (TMR) ratio has been monitored and interpreted as a function of anneal temperature, in combination with Auger analysis. At elevated anneal temperature, a more pronounced TMR decay was observed that originates in a different diffusion mechanism for Mn atoms, compared to tunnel junctions without NOL.
ISSN:0018-9464
1941-0069
DOI:10.1109/TMAG.2004.830433