Chemical bath deposited (CBD) ZnS buffer layer for CIGSS solar cells

Cadmium free buffer layers for Cu(In,Ga)S/sub x/Se/sub 2-x/ (CIGSS) thin film solar cells have been fabricated using a chemical bath deposition (CBD) technique. The purpose of this work was to replace the chemically deposited CdS buffer layer with an alternative non-cadmium buffer layer. In this stu...

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Bibliographic Details
Main Authors: Sambhu Kundu, Olsen, L.C.
Format: Conference Proceeding
Language:English
Subjects:
Applied sciences
Area measurement
Buffer layers
Cadmium
Chemicals
Energy
Exact sciences and technology
Natural energy
Photonic band gap
Photovoltaic cells
Photovoltaic conversion
Short circuit currents
Solar cells. Photoelectrochemical cells
Solar energy
Sputtering
Substrates
Zinc compounds
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Summary:Cadmium free buffer layers for Cu(In,Ga)S/sub x/Se/sub 2-x/ (CIGSS) thin film solar cells have been fabricated using a chemical bath deposition (CBD) technique. The purpose of this work was to replace the chemically deposited CdS buffer layer with an alternative non-cadmium buffer layer. In this study a major effort was made to improve quality of the ZnS buffer layers on 4cm/sup 2/ (2cm/spl times/2cm) CIGSS substrates. The use of CBD-ZnS layer, which is a higher band gap material than CBD-CdS, improved the quantum efficiency of the fabricated cells at short wavelengths, leading to a acceptable short circuit current (Jsc). The best cell yielded an active area efficiency of 13.3% on 0.42 cm/sup 2/ as measured by NREL.
ISSN:1060-8371
DOI:10.1109/PVSC.2002.1190648