Implementation of a Si-rich SiON nucleation layer for an improved selective SiGe HBT architecture

A Si-rich SiON is implemented as nucleation layer in a selective SiGe HBT architecture to improve the SiGe base layer process window and the reactor throughput. The concept is demonstrated in a 0.35 /spl mu/m BiCMOS technology.

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Bibliographic Details
Main Authors: Van Huylenbroeck, S., Loo, R., Decoutere, S., Vleugels, F., Kunnen, E., Schaekers, M., Caymax, M.
Format: Conference Proceeding
Language:English
Subjects:
Applied sciences
BiCMOS integrated circuits
Circuit properties
Electric, optical and optoelectronic circuits
Electronics
Etching
Exact sciences and technology
Germanium silicon alloys
Hafnium
Heterojunction bipolar transistors
Inductors
Microelectronic fabrication (materials and surfaces technology)
Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits
Resists
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Silicon germanium
Space technology
Throughput
Transistors
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Description
Summary:A Si-rich SiON is implemented as nucleation layer in a selective SiGe HBT architecture to improve the SiGe base layer process window and the reactor throughput. The concept is demonstrated in a 0.35 /spl mu/m BiCMOS technology.
ISSN:1088-9299
2378-590X
DOI:10.1109/BIPOL.2002.1042905