High C content Si/Si1−yCy heterostructures for n-type metal oxide semiconductor transistors

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Bibliographic Details
Published in:Semiconductor science and technology 2004-05, Vol.19 (5), p.593-601
Main Authors: Hartmann, J M, Ernst, T, Ducroquet, F, Rolland, G, Lafond, D, Papon, A-M, Truche, R, Holliger, P, Laugier, F, Séméria, M N, Deleonibus, S
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
Online Access:Get full text
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ISSN:0268-1242
1361-6641
DOI:10.1088/0268-1242/19/5/007