Unusual properties of the fundamental band gap of InN

The optical properties of wurtzite-structured InN grown on sapphire substrates by molecular-beam epitaxy have been characterized by optical absorption, photoluminescence, and photomodulated reflectance techniques. These three characterization techniques show an energy gap for InN between 0.7 and 0.8...

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Bibliographic Details
Published in:	Applied physics letters 2002-05, Vol.80 (21), p.3967-3969
Main Authors:	Wu, J., Walukiewicz, W., Yu, K. M., Ager, J. W., Haller, E. E., Lu, Hai, Schaff, William J., Saito, Yoshiki, Nanishi, Yasushi
Format:	Article
Language:	eng
Subjects:	LAWRENCE BERKELEY LABORATORY MATERIALS SCIENCE PHYSICS
Online Access:	Get full text
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Summary:	The optical properties of wurtzite-structured InN grown on sapphire substrates by molecular-beam epitaxy have been characterized by optical absorption, photoluminescence, and photomodulated reflectance techniques. These three characterization techniques show an energy gap for InN between 0.7 and 0.8 eV, much lower than the commonly accepted value of 1.9 eV. The photoluminescence peak energy is found to be sensitive to the free-electron concentration of the sample. The peak energy exhibits very weak hydrostatic pressure dependence, and a small, anomalous blueshift with increasing temperature.
ISSN:	0003-6951 1077-3118