Increased electrical activation in the near-surface region of sulfur and nitrogen coimplanted GaAs

A large increase in the electrical activation of sulfur coimplanted with nitrogen in GaAs is observed within a thin (

Bibliographic Details

Published in:	Applied physics letters 2000-11, Vol.77 (22), p.3607-3609
Main Authors:	Yu, K. M., Walukiewicz, W., Shan, W., Wu, J., Beeman, J. W., Ager, J. W., Haller, E. E.
Format:	Article
Language:	eng
Subjects:	ELECTRICAL PROPERTIES GALLIUM ARSENIDES ION IMPLANTATION MATERIALS SCIENCE NITROGEN IONS SULFUR IONS
Online Access:	Get full text
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