Monolithic hybrid mode-locked 1. 3. mu. m semiconductor lasers

We describe the first results of hybrid mode locking combining both active and passive mode locking of a semiconductor laser. These functions are integrated into a monolithic device with a 1.3 {mu}m GaInAsP gain region, an active waveguide, and a saturable absorber. The devices have low threshold cu...

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Bibliographic Details
Published in:Applied physics letters 1990-01, Vol.56:2
Main Authors: Morton, P.A., Bowers, J.E., Koszi, L.A., Soler, M., Lopata, J., Wilt, D.P.
Format: Article
Language:English
Subjects:
ARSENIC COMPOUNDS
ARSENIDES
CURRENTS
DATA
ELECTRIC CURRENTS
ELECTROMAGNETIC RADIATION
ENGINEERING
EXPERIMENTAL DATA
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
HYSTERESIS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
INFORMATION
INFRARED RADIATION
LASER CAVITIES
LASERS
MODE LOCKING
NUMERICAL DATA
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
RADIATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SOLID STATE LASERS 426002 > Engineering-- Lasers & Masers-- (1990-)
THRESHOLD CURRENT
WAVEGUIDES
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Description
Summary:We describe the first results of hybrid mode locking combining both active and passive mode locking of a semiconductor laser. These functions are integrated into a monolithic device with a 1.3 {mu}m GaInAsP gain region, an active waveguide, and a saturable absorber. The devices have low threshold currents, and exhibit hysteresis in their light/current characteristics. The long integrated waveguides allow mode locking at a repetition rate of 15 GHz without the need for an external cavity. Pulse widths as short as 1.4 ps have been demonstrated using the combined effects of active and passive mode locking.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.103046