Modeling of hot electron subpopulation and its application to impact ionization in submicron silicon devices; Part 2: Numerical solutions

A macroscopic transport model for the hot electron subpopulation (HES) and a nonlocal impact ionization (II) model were proposed in Part 1 of this article. The transport equations have been derived from the Boltzmann transport equation (BTE) and closure has been provided by an empirically determined...

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Bibliographic Details
Published in:IEEE transactions on electron devices 1994-07, Vol.41:7
Main Authors: Scrobohaci, P.G., Tang, T.W.
Format: Article
Language:English
Subjects:
426000 - Engineering- Components, Electron Devices & Circuits- (1990-)
BOUNDARY CONDITIONS
DOPED MATERIALS
ELECTRIC FIELDS
ELECTRON DENSITY
ELECTRON MOBILITY
ENGINEERING
IONIZATION
MATERIALS
MATHEMATICAL MODELS
MOBILITY
NUMERICAL SOLUTION
PARTICLE MOBILITY
SEMICONDUCTOR DEVICES
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Summary:A macroscopic transport model for the hot electron subpopulation (HES) and a nonlocal impact ionization (II) model were proposed in Part 1 of this article. The transport equations have been derived from the Boltzmann transport equation (BTE) and closure has been provided by an empirically determined equation. The transport equations and the II model have been calibrated using data obtained from self-consistent Monte Carlo (SCMC) simulations. In this article the authors present the numerical solutions obtained by applying the proposed model to n[sup +]-n[sup [minus]]-n[sup +] structures with various doping profiles. The results are compared to the data obtained from SCMC simulations and also to those obtained from models proposed earlier by other authors.
ISSN:0018-9383
1557-9646
DOI:10.1109/16.293348