Hydrogenation-defined stripe-geometry In sub 0. 5 (Al sub x Ga sub 1 minus x ) sub 0. 5 P quantum-well lasers

Data are presented on the continuous-wave (cw), room-temperature (300 K) operation of stripe-geometry In{sub 0.5}(Al{sub {ital x}}Ga{sub 1{minus}{ital x}}){sub 0.5}P quantum-well heterostructure lasers defined via hydrogenation. Passivation of the Zn acceptors in the cap and upper confining layer pr...

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Bibliographic Details
Published in:Journal of applied physics 1990-12, Vol.68:11
Main Authors: Dallesasse, J.M., El-Zein, N., Holonyak, N. Jr, Fletcher, R.M., Kuo, C.P., Osentowski, T.D., Craford, M.G.
Format: Article
Language:English
Subjects:
426002 - Engineering- Lasers & Masers- (1990-)
ALUMINIUM COMPOUNDS
ALUMINIUM PHOSPHIDES
CHEMICAL REACTIONS
ENGINEERING
FABRICATION
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
HYDROGENATION
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
LASERS
OPERATION
OXIDATION
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SOLID STATE LASERS
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Summary:Data are presented on the continuous-wave (cw), room-temperature (300 K) operation of stripe-geometry In{sub 0.5}(Al{sub {ital x}}Ga{sub 1{minus}{ital x}}){sub 0.5}P quantum-well heterostructure lasers defined via hydrogenation. Passivation of the Zn acceptors in the cap and upper confining layer provides gain guiding, and elimination of the current-blocking oxide reduces the thermal impedance. The resultant device is capable of better performance than conventional oxide-stripe diodes fabricated on the same material.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.346962