Effect of scattering by native defects on electron mobility in modulation-doped heterostructures

The effect of scattering by native defects on carrier mobility in modulation-doped heterostructures is calculated. The concentration of the defects is determined using the amphoteric native defect model. It is shown that the Fermi level induced reduction of the defect formation energy leads to an in...

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Bibliographic Details

Published in:	Applied physics letters 1991-04, Vol.58 (15), p.1638-1640
Main Authors:	WALUKIEWICZ, W, HALLER, E. E
Format:	Article
Language:	eng
Subjects:	360603 - Materials- Properties ALUMINIUM ARSENIDES ALUMINIUM COMPOUNDS ARSENIC COMPOUNDS ARSENIDES CARRIER MOBILITY Condensed matter: electronic structure, electrical, magnetic, and optical properties ELECTRON MOBILITY Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronic transport in interface structures ENERGY LEVELS Exact sciences and technology FERMI LEVEL GALLIUM ARSENIDES GALLIUM COMPOUNDS LAWRENCE BERKELEY LABORATORY MATERIALS SCIENCE MOBILITY MODULATION NATIONAL ORGANIZATIONS PARTICLE MOBILITY Physics PNICTIDES SCATTERING US AEC US DOE US ERDA US ORGANIZATIONS
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