Molecular Beam Epitaxy of Superconducting (Rb,Ba)BiO sub 3

The simple cubic perovskite (Rb,Ba)BiO sub 3 can be grown at temperatures < 350 deg C by molecular beam epitaxy using a rf plasma atomic oxygen source. Films with superconducting onsets in resistivity as high as 27K are obtained without annealing. The epitaxy proceeds in the normal (100) orientat...

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Bibliographic Details
Published in:Applied physics letters 1989-11, Vol.55 (20), p.2120-2122
Main Authors: Hellman, E S, Hartford, E H, Fleming, R M
Format: Article
Language:English
Subjects:
360601 - Other Materials- Preparation & Manufacture
360602 - Other Materials- Structure & Phase Studies
360603 - Materials- Properties
656100 - Condensed Matter Physics- Superconductivity
ALKALI METAL COMPOUNDS
ALKALINE EARTH METAL COMPOUNDS
ANNEALING
BARIUM COMPOUNDS
BARIUM OXIDES
BISMUTH COMPOUNDS
BISMUTH OXIDES
CHALCOGENIDES
COATINGS
COHERENT SCATTERING
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
DATA
DESORPTION
DIFFRACTION
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELECTRON DIFFRACTION
EPITAXY
EXPERIMENTAL DATA
FABRICATION
HEAT TREATMENTS
HIGH TEMPERATURE
INFORMATION
MAGNESIUM COMPOUNDS
MAGNESIUM OXIDES
MATERIALS SCIENCE
MOLECULAR BEAM EPITAXY
NUMERICAL DATA
OXIDES
OXYGEN COMPOUNDS
PEROVSKITES
PHYSICAL PROPERTIES
RUBIDIUM COMPOUNDS
RUBIDIUM OXIDES
SCATTERING
STRONTIUM COMPOUNDS
STRONTIUM OXIDES
SUPERCONDUCTING FILMS
SUPERCONDUCTIVITY
THERMODYNAMIC PROPERTIES
TRANSITION TEMPERATURE
VAPOR DEPOSITED COATINGS
VERY LOW TEMPERATURE
X-RAY DIFFRACTION
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Description
Summary:The simple cubic perovskite (Rb,Ba)BiO sub 3 can be grown at temperatures < 350 deg C by molecular beam epitaxy using a rf plasma atomic oxygen source. Films with superconducting onsets in resistivity as high as 27K are obtained without annealing. The epitaxy proceeds in the normal (100) orientation on {100} SrTiO sub 3 , despite a 10% lattice mismatch. (110) epitaxy and spotty reflection high-energy electron diffraction (RHEED) patterns are obtained on {100} MgO substrates, despite the good lattice match for (100) growth. Streaked and spotty RHEED patterns have been obtained on either substrate. Sticking coefficients for bismuth depend on the growth conditions, indicating that the epitaxy is partially controlled by desorption kinetics. Graphs, diffraction patterns. 12 ref.--AA
ISSN:0003-6951
1077-3118
DOI:10.1063/1.102343