A 3-dimensional model for inductively coupled plasma etching reactors: coil generated plasma asymmetries

Summary form only given. Inductively coupled plasma (ICP) reactors are being developed as high plasma density (10/sup 11/-10/sup 12/ cm/sup -3/), low gas pressure (

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Bibliographic Details
Main Authors: Kushner, M.J., Collison, W.Z., Grapperhaus, M.J.
Format: Conference Proceeding
Language:English
Subjects:
CHEMICAL REACTORS
Coils
Distributed parameter circuits
Electrons
ETCHING
Inductors
MATERIALS SCIENCE
MATHEMATICAL MODELS
Plasma applications
Plasma density
Plasma materials processing
Plasma simulation
Plasma sources
SEMICONDUCTOR MATERIALS
SURFACE COATING
THREE-DIMENSIONAL CALCULATIONS
Online Access:Request full text
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Description
Summary:Summary form only given. Inductively coupled plasma (ICP) reactors are being developed as high plasma density (10/sup 11/-10/sup 12/ cm/sup -3/), low gas pressure (
ISSN:0730-9244
2576-7208
DOI:10.1109/PLASMA.1996.550210