Rapid Thermal Processing of Implanted GaN up to 1500 Degree C

GaN implanted with donor (Si, S, Se, Te) or acceptor (Be, Mg, C) species was annealed at 900-1500 C using AlN encapsulation. No redistribution was measured by SIMS for any of the dopants and effective diffusion coefficients are {le}2 x 10{sup {minus}13} cm{sup 2} {center_dot} s{sup {minus}1} at 1400...

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Bibliographic Details
Published in:MRS Internet journal of nitride semiconductor research 1999-01, Vol.4S1
Main Authors: Cao, X.A., Pearton, S.J., Singh, R.K., Abernathy, C.R., Han, J., Shul, R.J., Rieger, D.J., Zolper, J.C., Wilson, R.G., Fu, M., Sekhar, J.A., Guo, H.J., Pennycook, S.J.
Format: Article
Language:English
Subjects:
ANNEALING
CRYSTAL LATTICES
DIFFUSION
EFFICIENCY
ENCAPSULATION
GALLIUM NITRIDES
ION IMPLANTATION
MATERIALS SCIENCE
POINT DEFECTS
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Summary:GaN implanted with donor (Si, S, Se, Te) or acceptor (Be, Mg, C) species was annealed at 900-1500 C using AlN encapsulation. No redistribution was measured by SIMS for any of the dopants and effective diffusion coefficients are {le}2 x 10{sup {minus}13} cm{sup 2} {center_dot} s{sup {minus}1} at 1400 C, except Be, which displays damage-enhanced diffusion at 900 C and is immobile once the point defect concentration is removed. Activation efficiency of {approximately}90% is obtained for Si at 1400 C. TEM of the implanted material shows a strong reduction in lattice disorder at 1400-1500 C compared to previous results at 1100 C. There is minimal interaction of the sputtered AlN with GaN under our conditions, and it is readily removed selectively with KOH.
ISSN:1092-5783
1092-5783