Nonresonance Phase Conjugation of Light at the Surface of GaN Films Upon High-Power Optical Pumping

The possibility of the nonresonance phase conjugation of light in an excited semiconductor medium is shown theoretically and experimentally. In epitaxial GaN films pumped with a nitrogen laser at room temperature, the induced phase conjugation of light in the visible and infrared spectral regions is...

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2019-01, Vol.53 (1), p.22-27
Main Authors: Gruzintsev, A. N., Redkin, A. N.
Format: Article
Language:English
Subjects:
ABSORPTION
Alloys
CHARGE CARRIERS
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
Conjugation
Current carriers
Electronics industry
EPITAXY
Gallium compounds
Gallium nitrate
GALLIUM NITRIDES
Interfaces
Laser pumping
LASERS
Light
Liquor
Magnetic Materials
Magnetism
Nitrides
NITROGEN
Nitrogen lasers
Nonresonance
OPTICAL PUMPING
Phase conjugation
PHOTONS
Physics
Physics and Astronomy
Radiation (Physics)
REFRACTION
SEMICONDUCTOR MATERIALS
Semiconductors (Materials)
Specialty metals industry
SURFACES
Technology
THIN FILMS
VISIBLE RADIATION
Zinc oxide
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Description
Summary:The possibility of the nonresonance phase conjugation of light in an excited semiconductor medium is shown theoretically and experimentally. In epitaxial GaN films pumped with a nitrogen laser at room temperature, the induced phase conjugation of light in the visible and infrared spectral regions is detected for the first time. The dependences of the phase-conjugation signal intensity on the photon energy and laser-pumping intensity are studied. An interpretation of the effect as a result of the absorption and refraction of light at laser-induced free charge carriers in the semiconductor medium is proposed.
ISSN:1063-7826
1090-6479
DOI:10.1134/S106378261901010X