A Superconducting Resonator with a Hafnium Microbridge at Temperatures of 50–350 mK

A high-quality superconducting resonator with a microbridge of hafnium film for use in a circuit for readout a terahertz-band imaging array with frequency division multiplexing is demonstrated experimentally. The variability of the impedance of the bridge at a frequency of 1.5 GHz, which is a key fa...

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Bibliographic Details
Published in:Technical physics letters 2018-07, Vol.44 (7), p.581-584
Main Authors: Merenkov, A. V., Shitov, S. V., Chichkov, V. I., Ermakov, A. B., Kim, T. M., Ustinov, A. V.
Format: Article
Language:English
Subjects:
BOLOMETERS
Classical and Continuum Physics
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
Critical temperature
CRYOSTATS
DILUTION
Frequency division multiplexing
GHZ RANGE 01-100
HAFNIUM
IMPEDANCE
NIOBIUM
Physics
Physics and Astronomy
RESONATORS
SUPERCONDUCTING FILMS
SUPERCONDUCTIVITY
Temperature
THERMAL CONDUCTIVITY
THERMAL INSULATION
THICKNESS
THZ RANGE
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Summary:A high-quality superconducting resonator with a microbridge of hafnium film for use in a circuit for readout a terahertz-band imaging array with frequency division multiplexing is demonstrated experimentally. The variability of the impedance of the bridge at a frequency of 1.5 GHz, which is a key factor in the control of the quality of the resonator, is studied. The bridge, having a thickness of about 50 nm, a critical temperature T C ≈ 380 mK, and a plan size of 2.5 × 2.5 μm, was connected as a load of a resonator made of niobium film with a thickness of about 100 nm ( T C ~ 9 K). It is shown that the bridge smoothly changes its impedance proportionally to the bias power in the entire temperature range. The effective thermal insulation of the bridge was measured in a dilution cryostat at temperatures of 50–300 mK. Thermal conductivity G of the bridge was calculated and found to be ~4 × 10 –13 W/K, which gives an estimate of the sensitivity of the structure in the bolometric mode NEP ≈ 8 × 10 –19 W/Hz 1/2 at a temperature of 150 mK.
ISSN:1063-7850
1090-6533
DOI:10.1134/S106378501807012X