Topological Insulator State in Thin Bismuth Films Subjected to Plane Tensile Strain

The results of experimental examination of galvanomagnetic properties of thin bismuth films subjected to plane tensile strain resulting from the difference in thermal expansion coefficients of the substrate material and bismuth are presented. The resistivity, the magnetoresistance, and the Hall coef...

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Bibliographic Details
Published in:Physics of the solid state 2018-03, Vol.60 (3), p.457-460
Main Authors: Demidov, E. V., Grabov, V. M., Komarov, V. A., Kablukova, N. S., Krushel’nitskii, A. N.
Format: Article
Language:English
Subjects:
14th International Conference on the Physics of Dielectrics
2017. Surface Physics
BISMUTH
CARRIER DENSITY
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
Electric properties
Electromagnetism
GALVANOMAGNETIC EFFECT
Hall effect
MAGNETIC FIELDS
MAGNETORESISTANCE
Magnetoresistivity
May 29–June 2
Mica
Movies
Physics
Physics and Astronomy
Solid State Physics
St. Petersburg
STRAINS
SUBSTRATES
SURFACES
THERMAL EXPANSION
Thermal properties
Thin Films
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Summary:The results of experimental examination of galvanomagnetic properties of thin bismuth films subjected to plane tensile strain resulting from the difference in thermal expansion coefficients of the substrate material and bismuth are presented. The resistivity, the magnetoresistance, and the Hall coefficient were studied at temperatures ranging from 5 to 300 K in magnetic fields as strong as 0.65 T. Carrier densities were calculated. A considerable increase in carrier density in films thinner than 30 nm was observed. This suggests that surface states are more prominent in thin bismuth films on mica substrates, while the films themselves may exhibit the properties of a topological insulator.
ISSN:1063-7834
1090-6460
DOI:10.1134/S106378341803006X