Phase Separation in GaMnAs Layers Grown by Laser Pulsed Deposition

GaMnAs layers grown by pulsed laser deposition were studied by magneto-optical transversal Kerr effect spectroscopy, spectral ellipsometry, resistivity and the Hall effect measurements, and magnetometry. The growth regimes for magnetically inhomogeneous layers containing Mn-enriched ferromagnetic re...

Full description

Saved in:
Bibliographic Details
Published in:Physics of the solid state 2018-05, Vol.60 (5), p.943-949
Main Authors: Kun’kova, Z. E., Gan’shina, E. A., Golik, L. L., Danilov, Yu. A., Kudrin, A. V., Kovalev, V. I., Zykov, G. S., Markin, Yu. V., Vikhrova, O. V., Zvonkov, B. N.
Format: Article
Language:English
Subjects:
ARSENIC COMPOUNDS
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
Conditioning
CRYSTAL GROWTH
ELECTRIC CONDUCTIVITY
ELLIPSOMETRY
ENERGY BEAM DEPOSITION
Ferromagnetism
GALLIUM COMPOUNDS
HALL EFFECT
KERR EFFECT
LASER RADIATION
LAYERS
Magnetic measurement
Magnetism
MAGNETOMETERS
MANGANESE COMPOUNDS
PARAMAGNETISM
Phase separation
Physics
Physics and Astronomy
PULSED IRRADIATION
Pulsed laser deposition
PULSES
Solid State Physics
SPECTRA
SPECTROSCOPY
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:GaMnAs layers grown by pulsed laser deposition were studied by magneto-optical transversal Kerr effect spectroscopy, spectral ellipsometry, resistivity and the Hall effect measurements, and magnetometry. The growth regimes for magnetically inhomogeneous layers containing Mn-enriched ferromagnetic regions with different composition and sizes were established. The layers grown at a temperature of 300°C exhibit a ferromagnetic behavior at temperatures below 80 K, which is conditioned by the presence of local ferromagnetic (Ga,Mn)As regions in the paramagnetic matrix. The nature of peculiarities in the TKE spectrum of these layers is discussed.
ISSN:1063-7834
1090-6460
DOI:10.1134/S1063783418050153