Nanoheterostructures optimization and characteristics improvement for devices based on them

The AlInGaN and AlGaInP nanoheterostructures design has been optimized by computer simulation in order to use them in optoelectronics. The possibility of improving the performance characteristics of LEDs by 20% is analyzed. The results are presented in the form of current–voltage (I– V ) characteris...

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Bibliographic Details
Published in:Crystallography reports 2017-05, Vol.62 (3), p.474-479
Main Authors: Rabinovich, O. I., Didenko, S. I.
Format: Article
Language:English
Subjects:
ATOMS
Computer simulation
COMPUTERIZED SIMULATION
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
Crystallography and Scattering Methods
Current voltage characteristics
Design analysis
Design optimization
Devices
DISTRIBUTION
ELECTRIC POTENTIAL
HETEROJUNCTIONS
Nanomaterials and Ceramics
Nanostructure
OPTIMIZATION
Optoelectronics
Physics
Physics and Astronomy
QUANTUM EFFICIENCY
QUANTUM WELLS
Spectra
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Summary:The AlInGaN and AlGaInP nanoheterostructures design has been optimized by computer simulation in order to use them in optoelectronics. The possibility of improving the performance characteristics of LEDs by 20% is analyzed. The results are presented in the form of current–voltage (I– V ) characteristics, dependence of the internal quantum efficiency on the quantum wells quantity, and spectral characteristics. The influence of the In atoms nonuniform distribution in the quantum-well region is determined.
ISSN:1063-7745
1562-689X
DOI:10.1134/S1063774517020237