Gallium vacancy ordering in Ga{sub 2}Se{sub 3} thin layers on Si(100), Si(111), and Si(123) substrates

Thin Ga{sub 2}Se{sub 3} layers deposited on silicon substrates with the (100), (111), and (123) orientations are studied by transmission electron microscopy and X-ray microanalysis. Some features and regularities of the stoichiometric gallium vacancy ordering at different substrate orientations are...

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Bibliographic Details
Published in:Crystallography reports 2017-09, Vol.62 (5)
Main Authors: Kuzubov, S. V., Kotov, G. I., Synorov, Yu. V.
Format: Article
Language:English
Subjects:
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
GALLIUM
GALLIUM SELENIDES
MATERIALS SCIENCE
MICROANALYSIS
SILICON
STOICHIOMETRY
SUBSTRATES
SURFACES
THIN FILMS
TRANSMISSION ELECTRON MICROSCOPY
VACANCIES
X RADIATION
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Summary:Thin Ga{sub 2}Se{sub 3} layers deposited on silicon substrates with the (100), (111), and (123) orientations are studied by transmission electron microscopy and X-ray microanalysis. Some features and regularities of the stoichiometric gallium vacancy ordering at different substrate orientations are discussed. The Ga{sub 3}Se{sub 4}(100)с(2 × 2) and Ga{sub 2}Se{sub 3}(111)(√3 × √3)-R30° ordered structures are formed on the Si(100) and Si(111) surfaces, respectively.
ISSN:1063-7745
1562-689X
DOI:10.1134/S1063774517050121