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Structure and Electrical Properties of Zirconium-Doped Tin-Oxide Films

Thin Zr-stabilized SnO 2 films are fabricated by ion-beam reactive sputtering. The amorphous thin-film SnO 2 samples with various Zr concentrations are synthesized in a single production process. The influence of heat treatment on the structure and electrical properties of the synthesized films is s...

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2018-09, Vol.52 (9), p.1118-1122
Main Authors: Sitnikov, A. V., Zhilova, O. V., Babkina, I. V., Makagonov, V. A., Kalinin, Yu. E., Remizova, O. I.
Format: Article
Language:English
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Summary:Thin Zr-stabilized SnO 2 films are fabricated by ion-beam reactive sputtering. The amorphous thin-film SnO 2 samples with various Zr concentrations are synthesized in a single production process. The influence of heat treatment on the structure and electrical properties of the synthesized films is studied. The onset of crystallization in thin-film Sn–Zr–O systems is observed at 673 and 773 K, which is accompanied by the appearance of metastable phases. Being heated to 873 K, these phases are transformed into Sn + Sn 2 O 3 . It is found that the electrotransfer the film crystallization at temperatures close to room temperature is thermally activated with an activation energy of ~0.78 eV. Tin-oxide films doped with Zr from 0.6 to 3.9 at % manifest the property of hydrogen-gas sensitivity after crystallization.
ISSN:1063-7826
1090-6479
DOI:10.1134/S106378261809018X