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Structure and Electrical Properties of Zirconium-Doped Tin-Oxide Films
Thin Zr-stabilized SnO 2 films are fabricated by ion-beam reactive sputtering. The amorphous thin-film SnO 2 samples with various Zr concentrations are synthesized in a single production process. The influence of heat treatment on the structure and electrical properties of the synthesized films is s...
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Published in: | Semiconductors (Woodbury, N.Y.) N.Y.), 2018-09, Vol.52 (9), p.1118-1122 |
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Main Authors: | , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | Thin Zr-stabilized SnO
2
films are fabricated by ion-beam reactive sputtering. The amorphous thin-film SnO
2
samples with various Zr concentrations are synthesized in a single production process. The influence of heat treatment on the structure and electrical properties of the synthesized films is studied. The onset of crystallization in thin-film Sn–Zr–O systems is observed at 673 and 773 K, which is accompanied by the appearance of metastable phases. Being heated to 873 K, these phases are transformed into Sn + Sn
2
O
3
. It is found that the electrotransfer the film crystallization at temperatures close to room temperature is thermally activated with an activation energy of ~0.78 eV. Tin-oxide films doped with Zr from 0.6 to 3.9 at % manifest the property of hydrogen-gas sensitivity after crystallization. |
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ISSN: | 1063-7826 1090-6479 |
DOI: | 10.1134/S106378261809018X |