Modulation of intersubband light absorption and interband photoluminescence in double GaAs/AlGaAs quantum wells under strong lateral electric fields

The effect of a lateral electric field on the mid-infrared absorption and interband photoluminescence spectra in double tunnel-coupled GaAs/AlGaAs quantum wells is studied. The results obtained are explained by the redistribution of hot electrons between quantum wells and changes in the space charge...

Full description

Saved in:
Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2016-11, Vol.50 (11), p.1425-1430
Main Authors: Balagula, R. M., Vinnichenko, M. Ya, Makhov, I. S., Firsov, D. A., Vorobjev, L. E.
Format: Article
Language:English
Subjects:
2016
ABSORPTION
ABSORPTION SPECTRA
ALUMINIUM ARSENIDES
Analysis
CHARGE CARRIERS
ELECTRIC FIELDS
ELECTRONS
EMISSION SPECTRA
GALLIUM ARSENIDES
Magnetic Materials
Magnetism
March 14–18
MATERIALS SCIENCE
MODULATION
Nizhny Novgorod
PHOTOLUMINESCENCE
Physics
Physics and Astronomy
QUANTUM WELLS
SPACE CHARGE
VISIBLE RADIATION
XX International Symposium “Nanophysics and Nanoelectronics”
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The effect of a lateral electric field on the mid-infrared absorption and interband photoluminescence spectra in double tunnel-coupled GaAs/AlGaAs quantum wells is studied. The results obtained are explained by the redistribution of hot electrons between quantum wells and changes in the space charge in the structure. The hot carrier temperature is determined by analyzing the intersubband light absorption and interband photoluminescence modulation spectra under strong lateral electric fields.
ISSN:1063-7826
1090-6479
DOI:10.1134/S106378261611004X