On the laser lift-off of lightly doped micrometer-thick n-GaN films from substrates via the absorption of IR radiation in sapphire

The intense absorption of CO 2 laser radiation in sapphire is used to separate GaN films from GaN templates on sapphire. Scanning of the sapphire substrate by the laser leads to the thermal dissociation of GaN at the GaN/sapphire interface and to the detachment of GaN films from the sapphire. The th...

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2017-01, Vol.51 (1), p.115-121
Main Authors: Voronenkov, V. V., Virko, M. V., Kogotkov, V. S., Leonidov, A. A., Pinchuk, A. V., Zubrilov, A. S., Gorbunov, R. I., Latishev, F. E., Bochkareva, N. I., Lelikov, Y. S., Tarkhin, D. V., Smirnov, A. N., Davydov, V. Y., Sheremet, I. A., Shreter, Y. G.
Format: Article
Language:English
Subjects:
ABSORPTION
ATOMIC FORCE MICROSCOPY
Carbon dioxide
CARBON DIOXIDE LASERS
CURRENT DENSITY
DOPED MATERIALS
Electric potential
Fabrication
GALLIUM NITRIDES
INFRARED RADIATION
INTERFACES
LASER RADIATION
Lasers
Magnetic Materials
Magnetism
MATERIALS SCIENCE
Microscopy
MORPHOLOGY
N-TYPE CONDUCTORS
Physics
Physics and Astronomy
Radiation
RAMAN SPECTROSCOPY
SAPPHIRE
SCANNING ELECTRON MICROSCOPY
SCHOTTKY BARRIER DIODES
Schottky diodes
Stress distribution
STRESSES
SUBSTRATES
Testing of Materials and Structures
Thermal dissociation
Thick films
THIN FILMS
Treatment
Voltage
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Summary:The intense absorption of CO 2 laser radiation in sapphire is used to separate GaN films from GaN templates on sapphire. Scanning of the sapphire substrate by the laser leads to the thermal dissociation of GaN at the GaN/sapphire interface and to the detachment of GaN films from the sapphire. The threshold density of the laser energy at which n -GaN started to dissociate is 1.6 ± 0.5 J/cm 2 . The mechanical-stress distribution and the surface morphology of GaN films and sapphire substrates before and after laser lift-off are studied by Raman spectroscopy, atomic-force microscopy, and scanning electron microscopy. A vertical Schottky diode with a forward current density of 100 A/cm 2 at a voltage of 2 V and a maximum reverse voltage of 150 V is fabricated on the basis of a 9-μm-thick detached n -GaN film.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782617010249