On the radiative recombination and tunneling of charge carriers in SiGe/Si heterostructures with double quantum wells

For SiGe/Si(001) epitaxial structures with two nonequivalent SiGe quantum wells separated by a thin Si barrier, the spectral and time characteristics of interband photoluminescence corresponding to the radiative recombination of excitons in quantum wells are studied. For a series of structures with...

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2016-12, Vol.50 (12), p.1604-1608
Main Authors: Yablonsky, A. N., Zhukavin, R. Kh, Bekin, N. A., Novikov, A. V., Yurasov, D. V., Shaleev, M. V.
Format: Article
Language:English
Subjects:
2016
CHARGE CARRIERS
CRYSTAL STRUCTURE
Current carriers
DIFFUSION BARRIERS
EPITAXY
EXCITONS
Germanium
GERMANIUM SILICIDES
HETEROJUNCTIONS
Heterostructures
HOLES
LAYERS
Magnetic Materials
Magnetism
March 14–18
MATERIALS SCIENCE
Nizhny Novgorod
PHOTOLUMINESCENCE
Physics
Physics and Astronomy
QUANTUM WELLS
Radiative recombination
RECOMBINATION
SILICON
Silicon compounds
Silicon germanides
Thickness
TUNNEL EFFECT
XX International Symposium “Nanophysics and Nanoelectronics”
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Summary:For SiGe/Si(001) epitaxial structures with two nonequivalent SiGe quantum wells separated by a thin Si barrier, the spectral and time characteristics of interband photoluminescence corresponding to the radiative recombination of excitons in quantum wells are studied. For a series of structures with two SiGe quantum wells different in width, the characteristic time of tunneling of charge carriers (holes) from the narrow quantum well, distinguished by a higher exciton recombination energy, to the wide quantum well is determined as a function of the Si barrier thickness. It is shown that the time of tunneling of holes between the Si 0.8 5Ge 0.15 layers with thicknesses of 3 and 9 nm steadily decreases from ~500 to
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782616120277