Suppression of boron diffusion using carbon co-implantation in DRAM

[Display omitted] •The impact of Ge+C co-implantation on dopant diffusion was investigated.•DIBL and VTH variation was improved by Ge+C co-implantation.•The VTH mismatch and the write characteristics were improved in the DRAM device. In this paper, germanium pre-amorphization implantation (PAI) and...

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Published in:Materials research bulletin 2016-10, Vol.82, p.22-25
Main Authors: Lee, Suk Hun, Park, Se Geun, Kim, Shin Deuk, Jung, Hyuck-Chai, Kim, Il Gweon, Kang, Dong-Ho, Kim, Dae Jung, Lee, Kyu Pil, Choi, Joo Sun, Baek, Jung-Woo, Choi, Moonsuk, Park, Yongkook, Choi, Changhwan, Park, Jin-Hong
Format: Article
Language:English
Subjects:
A. Electronic materials
A. Semiconductor
AMORPHOUS STATE
BORON
CARBON
D. Defect
D. Diffusion
D. Electrical properties
DIFFUSION
DOPED MATERIALS
ELECTRIC POTENTIAL
ELECTRICAL PROPERTIES
GERMANIUM
ION IMPLANTATION
MATERIALS SCIENCE
SEMICONDUCTOR MATERIALS
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cited_by cdi_FETCH-LOGICAL-c352t-bd53ace1d81699175b528b5bceeca2131f0e321fe6711d65f6c3dbf119bdc5503
cites cdi_FETCH-LOGICAL-c352t-bd53ace1d81699175b528b5bceeca2131f0e321fe6711d65f6c3dbf119bdc5503
container_end_page 25
container_issue
container_start_page 22
container_title Materials research bulletin
container_volume 82
creator Lee, Suk Hun
Park, Se Geun
Kim, Shin Deuk
Jung, Hyuck-Chai
Kim, Il Gweon
Kang, Dong-Ho
Kim, Dae Jung
Lee, Kyu Pil
Choi, Joo Sun
Baek, Jung-Woo
Choi, Moonsuk
Park, Yongkook
Choi, Changhwan
Park, Jin-Hong
description [Display omitted] •The impact of Ge+C co-implantation on dopant diffusion was investigated.•DIBL and VTH variation was improved by Ge+C co-implantation.•The VTH mismatch and the write characteristics were improved in the DRAM device. In this paper, germanium pre-amorphization implantation (PAI) and carbon co-implantation (Ge+C co-IIP) were applied to suppress boron diffusion. The corresponding characteristics were investigated in terms of the dopant diffusion, device performance, and its application to dynamic random access memory (DRAM). A shallow dopant profile was indicated and the threshold voltage (VTH) was reduced by approximately 45mV by Ge+C co-IIP. In the DRAM device, the VTH mismatch of the sense amplifier NMOS pairs was reduced by approximately 15% and the write characteristics were improved two-fold.
doi_str_mv 10.1016/j.materresbull.2016.03.011
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fullrecord <record><control><sourceid>elsevier_osti_</sourceid><recordid>TN_cdi_osti_scitechconnect_22581631</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>S002554081630112X</els_id><sourcerecordid>S002554081630112X</sourcerecordid><originalsourceid>FETCH-LOGICAL-c352t-bd53ace1d81699175b528b5bceeca2131f0e321fe6711d65f6c3dbf119bdc5503</originalsourceid><addsrcrecordid>eNqNUMlOwzAQtRBIlMI_RHBO8Nh1knKrWjYJhMRytryMwVUbR3aKxN_jUA4cuczyZt4bzSPkHGgFFOrLdbVVA8aISe82m4plrKK8ogAHZAJtw8sZY80hmVDKRClmtD0mJymtKaWztmkmZPmy6_tMTz50RXCFDjEX1ju3-4Fy7N4Lo6LOjQml3_Yb1Q1qGIe-K1bPi8dTcuTUJuHZb56St5vr1-Vd-fB0e79cPJSGCzaU2gquDIJtoZ7PoRFasFYLbRCNYsDBUeQMHNYNgK2Fqw232gHMtTVCUD4lF3vdkAYvk_EDmg8Tug7NIBkTWZdD3rrab5kYUoroZB_9VsUvCVSOpsm1_GuaHE2TlMtsWiav9mTMf3x6jOMZ7AxaH8crNvj_yHwDbkd9DA</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Suppression of boron diffusion using carbon co-implantation in DRAM</title><source>ScienceDirect Freedom Collection 2022-2024</source><creator>Lee, Suk Hun ; Park, Se Geun ; Kim, Shin Deuk ; Jung, Hyuck-Chai ; Kim, Il Gweon ; Kang, Dong-Ho ; Kim, Dae Jung ; Lee, Kyu Pil ; Choi, Joo Sun ; Baek, Jung-Woo ; Choi, Moonsuk ; Park, Yongkook ; Choi, Changhwan ; Park, Jin-Hong</creator><creatorcontrib>Lee, Suk Hun ; Park, Se Geun ; Kim, Shin Deuk ; Jung, Hyuck-Chai ; Kim, Il Gweon ; Kang, Dong-Ho ; Kim, Dae Jung ; Lee, Kyu Pil ; Choi, Joo Sun ; Baek, Jung-Woo ; Choi, Moonsuk ; Park, Yongkook ; Choi, Changhwan ; Park, Jin-Hong</creatorcontrib><description>[Display omitted] •The impact of Ge+C co-implantation on dopant diffusion was investigated.•DIBL and VTH variation was improved by Ge+C co-implantation.•The VTH mismatch and the write characteristics were improved in the DRAM device. In this paper, germanium pre-amorphization implantation (PAI) and carbon co-implantation (Ge+C co-IIP) were applied to suppress boron diffusion. The corresponding characteristics were investigated in terms of the dopant diffusion, device performance, and its application to dynamic random access memory (DRAM). A shallow dopant profile was indicated and the threshold voltage (VTH) was reduced by approximately 45mV by Ge+C co-IIP. In the DRAM device, the VTH mismatch of the sense amplifier NMOS pairs was reduced by approximately 15% and the write characteristics were improved two-fold.</description><identifier>ISSN: 0025-5408</identifier><identifier>EISSN: 1873-4227</identifier><identifier>DOI: 10.1016/j.materresbull.2016.03.011</identifier><language>eng</language><publisher>United States: Elsevier Ltd</publisher><subject>A. Electronic materials ; A. Semiconductor ; AMORPHOUS STATE ; BORON ; CARBON ; D. Defect ; D. Diffusion ; D. Electrical properties ; DIFFUSION ; DOPED MATERIALS ; ELECTRIC POTENTIAL ; ELECTRICAL PROPERTIES ; GERMANIUM ; ION IMPLANTATION ; MATERIALS SCIENCE ; SEMICONDUCTOR MATERIALS</subject><ispartof>Materials research bulletin, 2016-10, Vol.82, p.22-25</ispartof><rights>2016 Elsevier Ltd</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c352t-bd53ace1d81699175b528b5bceeca2131f0e321fe6711d65f6c3dbf119bdc5503</citedby><cites>FETCH-LOGICAL-c352t-bd53ace1d81699175b528b5bceeca2131f0e321fe6711d65f6c3dbf119bdc5503</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,315,786,790,891,27957,27958</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/22581631$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Lee, Suk Hun</creatorcontrib><creatorcontrib>Park, Se Geun</creatorcontrib><creatorcontrib>Kim, Shin Deuk</creatorcontrib><creatorcontrib>Jung, Hyuck-Chai</creatorcontrib><creatorcontrib>Kim, Il Gweon</creatorcontrib><creatorcontrib>Kang, Dong-Ho</creatorcontrib><creatorcontrib>Kim, Dae Jung</creatorcontrib><creatorcontrib>Lee, Kyu Pil</creatorcontrib><creatorcontrib>Choi, Joo Sun</creatorcontrib><creatorcontrib>Baek, Jung-Woo</creatorcontrib><creatorcontrib>Choi, Moonsuk</creatorcontrib><creatorcontrib>Park, Yongkook</creatorcontrib><creatorcontrib>Choi, Changhwan</creatorcontrib><creatorcontrib>Park, Jin-Hong</creatorcontrib><title>Suppression of boron diffusion using carbon co-implantation in DRAM</title><title>Materials research bulletin</title><description>[Display omitted] •The impact of Ge+C co-implantation on dopant diffusion was investigated.•DIBL and VTH variation was improved by Ge+C co-implantation.•The VTH mismatch and the write characteristics were improved in the DRAM device. In this paper, germanium pre-amorphization implantation (PAI) and carbon co-implantation (Ge+C co-IIP) were applied to suppress boron diffusion. The corresponding characteristics were investigated in terms of the dopant diffusion, device performance, and its application to dynamic random access memory (DRAM). A shallow dopant profile was indicated and the threshold voltage (VTH) was reduced by approximately 45mV by Ge+C co-IIP. In the DRAM device, the VTH mismatch of the sense amplifier NMOS pairs was reduced by approximately 15% and the write characteristics were improved two-fold.</description><subject>A. Electronic materials</subject><subject>A. Semiconductor</subject><subject>AMORPHOUS STATE</subject><subject>BORON</subject><subject>CARBON</subject><subject>D. Defect</subject><subject>D. Diffusion</subject><subject>D. Electrical properties</subject><subject>DIFFUSION</subject><subject>DOPED MATERIALS</subject><subject>ELECTRIC POTENTIAL</subject><subject>ELECTRICAL PROPERTIES</subject><subject>GERMANIUM</subject><subject>ION IMPLANTATION</subject><subject>MATERIALS SCIENCE</subject><subject>SEMICONDUCTOR MATERIALS</subject><issn>0025-5408</issn><issn>1873-4227</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2016</creationdate><recordtype>article</recordtype><recordid>eNqNUMlOwzAQtRBIlMI_RHBO8Nh1knKrWjYJhMRytryMwVUbR3aKxN_jUA4cuczyZt4bzSPkHGgFFOrLdbVVA8aISe82m4plrKK8ogAHZAJtw8sZY80hmVDKRClmtD0mJymtKaWztmkmZPmy6_tMTz50RXCFDjEX1ju3-4Fy7N4Lo6LOjQml3_Yb1Q1qGIe-K1bPi8dTcuTUJuHZb56St5vr1-Vd-fB0e79cPJSGCzaU2gquDIJtoZ7PoRFasFYLbRCNYsDBUeQMHNYNgK2Fqw232gHMtTVCUD4lF3vdkAYvk_EDmg8Tug7NIBkTWZdD3rrab5kYUoroZB_9VsUvCVSOpsm1_GuaHE2TlMtsWiav9mTMf3x6jOMZ7AxaH8crNvj_yHwDbkd9DA</recordid><startdate>20161001</startdate><enddate>20161001</enddate><creator>Lee, Suk Hun</creator><creator>Park, Se Geun</creator><creator>Kim, Shin Deuk</creator><creator>Jung, Hyuck-Chai</creator><creator>Kim, Il Gweon</creator><creator>Kang, Dong-Ho</creator><creator>Kim, Dae Jung</creator><creator>Lee, Kyu Pil</creator><creator>Choi, Joo Sun</creator><creator>Baek, Jung-Woo</creator><creator>Choi, Moonsuk</creator><creator>Park, Yongkook</creator><creator>Choi, Changhwan</creator><creator>Park, Jin-Hong</creator><general>Elsevier Ltd</general><scope>AAYXX</scope><scope>CITATION</scope><scope>OTOTI</scope></search><sort><creationdate>20161001</creationdate><title>Suppression of boron diffusion using carbon co-implantation in DRAM</title><author>Lee, Suk Hun ; Park, Se Geun ; Kim, Shin Deuk ; Jung, Hyuck-Chai ; Kim, Il Gweon ; Kang, Dong-Ho ; Kim, Dae Jung ; Lee, Kyu Pil ; Choi, Joo Sun ; Baek, Jung-Woo ; Choi, Moonsuk ; Park, Yongkook ; Choi, Changhwan ; Park, Jin-Hong</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c352t-bd53ace1d81699175b528b5bceeca2131f0e321fe6711d65f6c3dbf119bdc5503</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2016</creationdate><topic>A. Electronic materials</topic><topic>A. Semiconductor</topic><topic>AMORPHOUS STATE</topic><topic>BORON</topic><topic>CARBON</topic><topic>D. Defect</topic><topic>D. Diffusion</topic><topic>D. Electrical properties</topic><topic>DIFFUSION</topic><topic>DOPED MATERIALS</topic><topic>ELECTRIC POTENTIAL</topic><topic>ELECTRICAL PROPERTIES</topic><topic>GERMANIUM</topic><topic>ION IMPLANTATION</topic><topic>MATERIALS SCIENCE</topic><topic>SEMICONDUCTOR MATERIALS</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Lee, Suk Hun</creatorcontrib><creatorcontrib>Park, Se Geun</creatorcontrib><creatorcontrib>Kim, Shin Deuk</creatorcontrib><creatorcontrib>Jung, Hyuck-Chai</creatorcontrib><creatorcontrib>Kim, Il Gweon</creatorcontrib><creatorcontrib>Kang, Dong-Ho</creatorcontrib><creatorcontrib>Kim, Dae Jung</creatorcontrib><creatorcontrib>Lee, Kyu Pil</creatorcontrib><creatorcontrib>Choi, Joo Sun</creatorcontrib><creatorcontrib>Baek, Jung-Woo</creatorcontrib><creatorcontrib>Choi, Moonsuk</creatorcontrib><creatorcontrib>Park, Yongkook</creatorcontrib><creatorcontrib>Choi, Changhwan</creatorcontrib><creatorcontrib>Park, Jin-Hong</creatorcontrib><collection>CrossRef</collection><collection>OSTI.GOV</collection><jtitle>Materials research bulletin</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Lee, Suk Hun</au><au>Park, Se Geun</au><au>Kim, Shin Deuk</au><au>Jung, Hyuck-Chai</au><au>Kim, Il Gweon</au><au>Kang, Dong-Ho</au><au>Kim, Dae Jung</au><au>Lee, Kyu Pil</au><au>Choi, Joo Sun</au><au>Baek, Jung-Woo</au><au>Choi, Moonsuk</au><au>Park, Yongkook</au><au>Choi, Changhwan</au><au>Park, Jin-Hong</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Suppression of boron diffusion using carbon co-implantation in DRAM</atitle><jtitle>Materials research bulletin</jtitle><date>2016-10-01</date><risdate>2016</risdate><volume>82</volume><spage>22</spage><epage>25</epage><pages>22-25</pages><issn>0025-5408</issn><eissn>1873-4227</eissn><abstract>[Display omitted] •The impact of Ge+C co-implantation on dopant diffusion was investigated.•DIBL and VTH variation was improved by Ge+C co-implantation.•The VTH mismatch and the write characteristics were improved in the DRAM device. In this paper, germanium pre-amorphization implantation (PAI) and carbon co-implantation (Ge+C co-IIP) were applied to suppress boron diffusion. The corresponding characteristics were investigated in terms of the dopant diffusion, device performance, and its application to dynamic random access memory (DRAM). A shallow dopant profile was indicated and the threshold voltage (VTH) was reduced by approximately 45mV by Ge+C co-IIP. In the DRAM device, the VTH mismatch of the sense amplifier NMOS pairs was reduced by approximately 15% and the write characteristics were improved two-fold.</abstract><cop>United States</cop><pub>Elsevier Ltd</pub><doi>10.1016/j.materresbull.2016.03.011</doi><tpages>4</tpages></addata></record>
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subjects A. Electronic materials
A. Semiconductor
AMORPHOUS STATE
BORON
CARBON
D. Defect
D. Diffusion
D. Electrical properties
DIFFUSION
DOPED MATERIALS
ELECTRIC POTENTIAL
ELECTRICAL PROPERTIES
GERMANIUM
ION IMPLANTATION
MATERIALS SCIENCE
SEMICONDUCTOR MATERIALS
title Suppression of boron diffusion using carbon co-implantation in DRAM
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-09-22T03%3A30%3A11IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-elsevier_osti_&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Suppression%20of%20boron%20diffusion%20using%20carbon%20co-implantation%20in%20DRAM&rft.jtitle=Materials%20research%20bulletin&rft.au=Lee,%20Suk%20Hun&rft.date=2016-10-01&rft.volume=82&rft.spage=22&rft.epage=25&rft.pages=22-25&rft.issn=0025-5408&rft.eissn=1873-4227&rft_id=info:doi/10.1016/j.materresbull.2016.03.011&rft_dat=%3Celsevier_osti_%3ES002554081630112X%3C/elsevier_osti_%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c352t-bd53ace1d81699175b528b5bceeca2131f0e321fe6711d65f6c3dbf119bdc5503%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true