Suppression of boron diffusion using carbon co-implantation in DRAM

[Display omitted] •The impact of Ge+C co-implantation on dopant diffusion was investigated.•DIBL and VTH variation was improved by Ge+C co-implantation.•The VTH mismatch and the write characteristics were improved in the DRAM device. In this paper, germanium pre-amorphization implantation (PAI) and...

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Bibliographic Details
Published in:Materials research bulletin 2016-10, Vol.82, p.22-25
Main Authors: Lee, Suk Hun, Park, Se Geun, Kim, Shin Deuk, Jung, Hyuck-Chai, Kim, Il Gweon, Kang, Dong-Ho, Kim, Dae Jung, Lee, Kyu Pil, Choi, Joo Sun, Baek, Jung-Woo, Choi, Moonsuk, Park, Yongkook, Choi, Changhwan, Park, Jin-Hong
Format: Article
Language:English
Subjects:
A. Electronic materials
A. Semiconductor
AMORPHOUS STATE
BORON
CARBON
D. Defect
D. Diffusion
D. Electrical properties
DIFFUSION
DOPED MATERIALS
ELECTRIC POTENTIAL
ELECTRICAL PROPERTIES
GERMANIUM
ION IMPLANTATION
MATERIALS SCIENCE
SEMICONDUCTOR MATERIALS
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Summary:[Display omitted] •The impact of Ge+C co-implantation on dopant diffusion was investigated.•DIBL and VTH variation was improved by Ge+C co-implantation.•The VTH mismatch and the write characteristics were improved in the DRAM device. In this paper, germanium pre-amorphization implantation (PAI) and carbon co-implantation (Ge+C co-IIP) were applied to suppress boron diffusion. The corresponding characteristics were investigated in terms of the dopant diffusion, device performance, and its application to dynamic random access memory (DRAM). A shallow dopant profile was indicated and the threshold voltage (VTH) was reduced by approximately 45mV by Ge+C co-IIP. In the DRAM device, the VTH mismatch of the sense amplifier NMOS pairs was reduced by approximately 15% and the write characteristics were improved two-fold.
ISSN:0025-5408
1873-4227
DOI:10.1016/j.materresbull.2016.03.011