InGaAs/InAsSb strained layer superlattices for mid-wave infrared detectors

Investigation of growth and properties of InGaAs/InAsSb strained layer superlattices, identified as ternary strained layer superlattices (ternary SLSs), is reported. The material space for the antimony-based SLS detector development is expanded beyond InAs/InAsSb and InAs/(In)GaSb by incorporating G...

Full description

Saved in:
Bibliographic Details
Published in:Applied physics letters 2016-01, Vol.108 (2)
Main Authors: Ariyawansa, Gamini, Reyner, Charles J., Steenbergen, Elizabeth H., Duran, Joshua M., Reding, Joshua D., Scheihing, John E., Bourassa, Henry R., Liang, Baolai L., Huffaker, Diana L.
Format: Article
Language:English
Subjects:
ABSORPTION
Absorptivity
ANTIMONY
Applied physics
CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS
Conduction bands
Energy gap
GALLIUM ANTIMONIDES
GALLIUM ARSENIDES
Holes (electron deficiencies)
INDIUM ARSENIDES
Indium gallium arsenides
Infrared detectors
LAYERS
STRAINS
SUPERLATTICES
WAVE FUNCTIONS
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Investigation of growth and properties of InGaAs/InAsSb strained layer superlattices, identified as ternary strained layer superlattices (ternary SLSs), is reported. The material space for the antimony-based SLS detector development is expanded beyond InAs/InAsSb and InAs/(In)GaSb by incorporating Ga into InAs. It was found that this not only provides support for strain compensation but also enhances the infrared (IR) absorption properties. A unique InGaAs/InAsSb SLS exists when the conduction band of InGaAs aligns with that of InAsSb. The bandgap of this specific InGaAs/InAsSb SLS can then be tuned by adjusting the thickness of both constituents. Due to the enhanced electron-hole wavefunction overlap, a significant increase in the absorption coefficient was theoretically predicted for ternary SLS as compared to current state-of-the-art InAs/InAsSb SLS structures, and an approximately 30%–35% increase in the absorption coefficient was experimentally observed. All the samples examined in this work were designed to have the same bandgap of approximately 0.240 eV (5.6 μm) at 150 K.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4939904