White-light-induced disruption of nanoscale conducting filament in hafnia

Nanoscale conducting filament, which forms the basis of the HfO2 resistive memory, is shown to exhibit a “negative photoconductivity” behavior, in that, electrical conduction through it can be disrupted upon white-light illumination. This behavior should be contrasted against the positive photocondu...

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Bibliographic Details
Published in:Applied physics letters 2015-08, Vol.107 (7)
Main Authors: Zhou, Y., Yew, K. S., Ang, D. S., Kawashima, T., Bera, M. K., Zhang, H. Z., Bersuker, G.
Format: Article
Language:English
Subjects:
Applied physics
CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS
Disruption
Electrical conduction
EXCITATION
FILAMENTS
Hafnium oxide
HAFNIUM OXIDES
Migration
NANOSTRUCTURES
OXYGEN IONS
PEROVSKITES
PHOTOCONDUCTIVITY
PHOTONS
VACANCIES
VISIBLE RADIATION
White light
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Summary:Nanoscale conducting filament, which forms the basis of the HfO2 resistive memory, is shown to exhibit a “negative photoconductivity” behavior, in that, electrical conduction through it can be disrupted upon white-light illumination. This behavior should be contrasted against the positive photoconductivity behavior commonly exhibited by oxides or perovskites having narrower bandgaps. The negative photoconductivity effect may be explained in terms of a photon-induced excitation of surrounding oxygen ions, which leads to migration and subsequent recombination with vacancies in the conducting filament. The finding suggests possible electrical-cum-optical applications for HfO2-based devices, whose functionality is limited to-date by electrical stimulation.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4929324