Mn doped InSb studied at the atomic scale by cross-sectional scanning tunneling microscopy

We present an atomically resolved study of metal-organic vapor epitaxy grown Mn doped InSb. Both topographic and spectroscopic measurements have been performed by cross-sectional scanning tunneling microscopy (STM). The measurements on the Mn doped InSb samples show a perfect crystal structure witho...

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Bibliographic Details
Published in:Applied physics letters 2015-11, Vol.107 (22)
Main Authors: Mauger, S. J. C., Bocquel, J., Koenraad, P. M., Feeser, C. E., Parashar, N. D., Wessels, B. W.
Format: Article
Language:English
Subjects:
ABUNDANCE
Applied physics
ATOMS
CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS
Clustering
CORRELATION FUNCTIONS
Cross-sections
CRYSTAL STRUCTURE
DISTRIBUTION
DOPED MATERIALS
Epitaxial growth
EPITAXY
Indium antimonide
INDIUM ANTIMONIDES
Intermetallic compounds
MANGANESE IONS
Microscopy
ORGANOMETALLIC COMPOUNDS
Percolation
Precipitates
RANDOMNESS
RESOLUTION
SCANNING TUNNELING MICROSCOPY
VAPORS
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Summary:We present an atomically resolved study of metal-organic vapor epitaxy grown Mn doped InSb. Both topographic and spectroscopic measurements have been performed by cross-sectional scanning tunneling microscopy (STM). The measurements on the Mn doped InSb samples show a perfect crystal structure without any precipitates and reveal that Mn acts as a shallow acceptor. The Mn concentration of the order of ∼1020 cm−3 obtained from the cross-sectional STM data compare well with the intended doping concentration. While the pair correlation function of the Mn atoms showed that their local distribution is uncorrelated beyond the STM resolution for observing individual dopants, disorder in the Mn ion location giving rise to percolation pathways is clearly noted. The amount of clustering that we see is thus as expected for a fully randomly disordered distribution of the Mn atoms and no enhanced clustering or second phase material was observed.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4936754