Experimental and theoretical study of polarized photoluminescence caused by anisotropic strain relaxation in nonpolar a -plane textured ZnO grown by a low-pressure chemical vapor deposition

Anisotropic strain relaxation and the resulting degree of polarization of photoluminescence (PL) in nonpolar a-plane textured ZnO are experimentally and theoretically studied. A thicker nonpolar a-plane textured ZnO film enhances the anisotropic in-plane strain relaxation, resulting in a larger degr...

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Bibliographic Details
Published in:Applied physics letters 2015-07, Vol.107 (2)
Main Authors: Lai, Chih-Ming, Huang, Yu-En, Kou, Kuang-Yang, Chen, Chien-Hsun, Tu, Li-Wei, Feng, Shih-Wei
Format: Article
Language:English
Subjects:
ANISOTROPY
Applied physics
CHEMICAL VAPOR DEPOSITION
CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS
Organic chemistry
Perturbation
PHOTOLUMINESCENCE
Plane strain
POLARIZATION
PRESSURE RANGE KILO PA
RELAXATION
SIMULATION
Strain relaxation
STRAINS
TEXTURE
VARIATIONS
Zinc oxide
ZINC OXIDES
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Summary:Anisotropic strain relaxation and the resulting degree of polarization of photoluminescence (PL) in nonpolar a-plane textured ZnO are experimentally and theoretically studied. A thicker nonpolar a-plane textured ZnO film enhances the anisotropic in-plane strain relaxation, resulting in a larger degree of polarization of PL and better sample quality. Anisotropic in-plane strains, sample quality, and degree of polarization of PL in nonpolar a-plane ZnO are consequences of the degree of anisotropic in-plane strain relaxation. By the k·p perturbation approach, simulation results of the variation of the degree of polarization for the electronic transition upon anisotropic in-plane strain relaxation agree with experimental results.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4926978