Hopping transport in the space-charge region of p-n structures with InGaN/GaN QWs as a source of excess 1/f noise and efficiency droop in LEDs

It is shown that the emission efficiency and the 1/ f noise level in light-emitting diodes with InGaN/GaN quantum wells correlate with how the differential resistance of a diode varies with increasing current. Analysis of the results shows that hopping transport via defect states across the n -type...

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2015-06, Vol.49 (6), p.827-835
Main Authors: Bochkareva, N. I., Ivanov, A. M., Klochkov, A. V., Kogotkov, V. S., Rebane, Yu. T., Virko, M. V., Shreter, Y. G.
Format: Article
Language:English
Subjects:
BYPASSES
DENSITY
ELECTRONS
GALLIUM NITRIDES
INDIUM COMPOUNDS
LEAKAGE CURRENT
LIGHT EMITTING DIODES
Magnetic Materials
Magnetism
MATERIALS SCIENCE
N-TYPE CONDUCTORS
NANOSCIENCE AND NANOTECHNOLOGY
PHOTON EMISSION
Physics
Physics and Astronomy
Physics of Semiconductor Devices
QUANTUM WELLS
RECOMBINATION
SPACE CHARGE
TUNNEL EFFECT
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Summary:It is shown that the emission efficiency and the 1/ f noise level in light-emitting diodes with InGaN/GaN quantum wells correlate with how the differential resistance of a diode varies with increasing current. Analysis of the results shows that hopping transport via defect states across the n -type part of the space-charge region results in limitation of the current by the tunneling resistance at intermediate currents and shunting of the n -type barrier at high currents. The increase in the average number of tunneling electrons suppresses the 1/ f current noise at intermediate currents. The strong growth in the density of current noise at high currents, S J ∝ J 3 , is attributed to a decrease in the average number of tunneling electrons as the n -type barrier decreases in height and width with increasing forward bias. The tunneling-recombination leakage current along extended defects grows faster than the tunneling injection current, which leads to emission efficiency droop.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782615060056