Band gap bowing parameter in pseudomorphic Al{sub x}Ga{sub 1−x}N/GaN high electron mobility transistor structures

A method for evaluation of aluminium composition in pseudomorphic Al{sub x}Ga{sub 1−x}N layer from the measured photoluminescence (PL) peak energy is presented here. The layers were grown by metalorganic chemical vapor deposition and characterized by high resolution X-ray diffraction (HRXRD), PL, ca...

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Bibliographic Details
Published in:Journal of applied physics 2015-06, Vol.117 (22)
Main Authors: Goyal, Anshu, Kapoor, Ashok K., Raman, R., Dalal, Sandeep, Mohan, Premila, Muralidharan, R.
Format: Article
Language:English
Subjects:
ALUMINIUM COMPOUNDS
ATOMIC FORCE MICROSCOPY
CATHODOLUMINESCENCE
CHEMICAL VAPOR DEPOSITION
CONCENTRATION RATIO
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
DENSITY FUNCTIONAL METHOD
ELECTRON MOBILITY
ELECTRONIC STRUCTURE
ENERGY GAP
GALLIUM NITRIDES
LAYERS
PHOTOLUMINESCENCE
SAPPHIRE
SILICON CARBIDES
STRESSES
SUBSTRATES
TRANSISTORS
X-RAY DIFFRACTION
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Summary:A method for evaluation of aluminium composition in pseudomorphic Al{sub x}Ga{sub 1−x}N layer from the measured photoluminescence (PL) peak energy is presented here. The layers were grown by metalorganic chemical vapor deposition and characterized by high resolution X-ray diffraction (HRXRD), PL, cathodoluminescence, and atomic force microscopy. We estimated the value of biaxial stress in pseudomorphic Al{sub x}Ga{sub 1−x}N layers grown on sapphire and silicon carbide substrates using HRXRD scans. The effect of biaxial stress on the room temperature band edge luminescence in pseudomorphic Al{sub x}Ga{sub 1−x}N/GaN layers for various aluminium compositions in the range of 0.2 
ISSN:0021-8979
1089-7550
DOI:10.1063/1.4922286