Strain-compensated (Ga,In)N/(Al,Ga)N/GaN multiple quantum wells for improved yellow/amber light emission

Yellow/amber (570–600 nm) emitting InxGa1−xN/AlyGa1−yN/GaN multiple quantum wells (QWs) have been grown by metal organic chemical vapor deposition on GaN-on- sapphire templates. When the (Al,Ga)N thickness of the barrier increases, the room temperature photoluminescence is red-shifted while its yiel...

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Bibliographic Details
Published in:Applied physics letters 2015-04, Vol.106 (14)
Main Authors: Lekhal, K., Damilano, B., Ngo, H. T., Rosales, D., De Mierry, P., Hussain, S., Vennéguès, P., Gil, B.
Format: Article
Language:English
Subjects:
ALUMINIUM COMPOUNDS
Aluminum
Applied physics
CHEMICAL VAPOR DEPOSITION
Compressive properties
Condensed Matter
ELECTRIC FIELDS
GALLIUM NITRIDES
HETEROJUNCTIONS
INDIUM COMPOUNDS
INTERFACES
LAYERS
Light emission
Metalorganic chemical vapor deposition
NANOSCIENCE AND NANOTECHNOLOGY
Organic chemicals
Organic chemistry
ORGANOMETALLIC COMPOUNDS
Other
PHOTOLUMINESCENCE
Physics
QUANTUM WELLS
RED SHIFT
SAPPHIRE
STRAINS
TEMPERATURE RANGE 0273-0400 K
VISIBLE RADIATION
YTTRIUM NITRIDES
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Summary:Yellow/amber (570–600 nm) emitting InxGa1−xN/AlyGa1−yN/GaN multiple quantum wells (QWs) have been grown by metal organic chemical vapor deposition on GaN-on- sapphire templates. When the (Al,Ga)N thickness of the barrier increases, the room temperature photoluminescence is red-shifted while its yield increases. This is attributed to an increase of the QW internal electric field and an improvement of the material quality due to the compensation of the compressive strain of the InxGa1−xN QWs by the AlyGa1−yN layers, respectively.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4917222