Ex post manipulation of barriers in InGaAs tunnel injection devices

Ex post manipulation of ∼1.1 μm emitting InGaAs/GaAs-based quantum dot–quantum well tunnel injection light emitting devices is demonstrated experimentally. The devices were operated at elevated forward currents until irreversible alterations were observed. As a result, changes in the steady-state op...

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Bibliographic Details
Published in:Applied physics letters 2015-01, Vol.106 (1)
Main Authors: Talalaev, Vadim G., Cirlin, George E., Novikov, Boris V., Fuhrmann, Bodo, Werner, Peter, Tomm, Jens W.
Format: Article
Language:English
Subjects:
ANNEALING
Applied physics
CHARGE CARRIERS
Degradation
ELECTROLUMINESCENCE
GALLIUM ARSENIDES
INDIUM ARSENIDES
Indium gallium arsenides
NANOSCIENCE AND NANOTECHNOLOGY
Optical properties
Photoelectric effect
Photoelectric emission
PHOTOLUMINESCENCE
QUANTUM DOTS
QUANTUM WELLS
Restoration
STEADY-STATE CONDITIONS
VISIBLE RADIATION
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Summary:Ex post manipulation of ∼1.1 μm emitting InGaAs/GaAs-based quantum dot–quantum well tunnel injection light emitting devices is demonstrated experimentally. The devices were operated at elevated forward currents until irreversible alterations were observed. As a result, changes in the steady-state optical spectra (electroluminescence, photoluminescence, and photocurrent), in carrier kinetics, in transport properties, and real structure are found. Except for degradation effects, e.g., of larger quantum dots, also restoration/annealing effects such as increased tunnel barriers are observed. The results furnish evidence for a generic degradation mode of nanostructures. We qualitatively interpret the mechanisms involved on both the nanoscopic and the device scales.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4905467