Erratum: “High performance solution-deposited amorphous indium gallium zinc oxide thin film transistors by oxygen plasma treatment” [Appl. Phys. Lett. 100 , 202106 (2012)]

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Bibliographic Details
Published in:Applied physics letters 2014-12, Vol.105 (24)
Main Authors: Nayak, Pradipta K., Hedhili, M. N., Cha, Dongkyu, Alshareef, H. N.
Format: Article
Language:English
Subjects:
AMORPHOUS STATE
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
Gallium
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
Indium gallium zinc oxide
MATHEMATICAL SOLUTIONS
Oxygen plasma
PLASMA
Semiconductor devices
Thin film transistors
THIN FILMS
TRANSISTORS
Zinc oxide
ZINC OXIDES
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ISSN:0003-6951
1077-3118
DOI:10.1063/1.4902402