Band filling effects on temperature performance of intermediate band quantum wire solar cells

Detailed studies of solar cell efficiency as a function of temperature were performed for quantum wire intermediate band solar cells grown on the (311)A plane. A remotely doped one-dimensional intermediate band made of self-assembled In0.4Ga0.6As quantum wires was compared to an undoped intermediate...

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Bibliographic Details
Published in:Journal of applied physics 2014-08, Vol.116 (8)
Main Authors: Kunets, Vas. P., Furrow, C. S., Ware, M. E., de Souza, L. D., Benamara, M., Mortazavi, M., Salamo, G. J.
Format: Article
Language:English
Subjects:
ABSORPTION
Carrier transport
CARRIERS
CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS
COMPARATIVE EVALUATIONS
DOPED MATERIALS
EFFICIENCY
Free electrons
GALLIUM ARSENIDES
Incident light
ONE-DIMENSIONAL CALCULATIONS
Photovoltaic cells
QUANTUM WIRES
Self-assembly
SOLAR CELLS
TEMPERATURE DEPENDENCE
Temperature effects
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Summary:Detailed studies of solar cell efficiency as a function of temperature were performed for quantum wire intermediate band solar cells grown on the (311)A plane. A remotely doped one-dimensional intermediate band made of self-assembled In0.4Ga0.6As quantum wires was compared to an undoped intermediate band and a reference p-i-n GaAs sample. These studies indicate that the efficiencies of these solar cells depend on the population of the one-dimensional band by equilibrium free carriers. A change in this population by free electrons under various temperatures affects absorption and carrier transport of non-equilibrium carriers generated by incident light. This results in different efficiencies for both the doped and undoped intermediate band solar cells in comparison with the reference GaAs p-i-n solar cell device.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.4893898