Analysis of synthetic diamond single crystals by X-ray topography and double-crystal diffractometry

Structural features of diamond single crystals synthesized under high pressure and homoepitaxial films grown by chemical vapor deposition (CVD) have been analyzed by double-crystal X-ray diffractometry and topography. The conditions of a diffraction analysis of diamond crystals using Ge monochromato...

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Bibliographic Details
Published in:Crystallography reports 2013-12, Vol.58 (7), p.1010-1016
Main Authors: Prokhorov, I. A., Ralchenko, V. G., Bolshakov, A. P., Polskiy, A. V., Vlasov, A. V., Subbotin, I. A., Podurets, K. M., Pashaev, E. M., Sozontov, E. A.
Format: Article
Language:English
Subjects:
CHEMICAL VAPOR DEPOSITION
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
CRYSTAL DEFECTS
Crystallography and Scattering Methods
DIAMONDS
EPITAXY
MONOCRYSTALS
Physics
Physics and Astronomy
Real Structure of Crystals
X RADIATION
X-RAY DIFFRACTION
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Summary:Structural features of diamond single crystals synthesized under high pressure and homoepitaxial films grown by chemical vapor deposition (CVD) have been analyzed by double-crystal X-ray diffractometry and topography. The conditions of a diffraction analysis of diamond crystals using Ge monochromators have been optimized. The main structural defects (dislocations, stacking faults, growth striations, second-phase inclusions, etc.) formed during crystal growth have been revealed. The nitrogen concentration in high-pressure/high-temperature (HPHT) diamond substrates is estimated based on X-ray diffraction data. The formation of dislocation bundles at the film-substrate interface in the epitaxial structures has been revealed by plane-wave topography; these dislocations are likely due to the relaxation of elastic macroscopic stresses caused by the lattice mismatch between the substrate and film. The critical thicknesses of plastic relaxation onset in CVD diamond films are calculated. The experimental techniques for studying the real diamond structure in optimizing crystal-growth technology are proven to be highly efficient.
ISSN:1063-7745
1562-689X
DOI:10.1134/S1063774513070146