Plasmonic modification of electron-longitudinal-optical phonon coupling in Ag-nanoparticle embedded InGaN/GaN quantum wells

Surface plasmon enhanced GaN and InGaN quantum wells (QWs) show promise for use as room-temperature light emitters. The effectiveness of the plasmon enhancement, however, is limited by the strong electron/hole and longitudinal optical phonon coupling found in the III-V nitrides. The electron-phonon...

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Bibliographic Details
Published in:Applied physics letters 2014-09, Vol.105 (9)
Main Authors: Llopis, Antonio, Pereira, Sérgio M. S., Watson, Ian M., Neogi, Arup
Format: Article
Language:English
Subjects:
Applied physics
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
Coupling
EFFICIENCY
ELECTRON-PHONON COUPLING
Electrons
Emitters
Emitters (electron)
GALLIUM NITRIDES
INDIUM COMPOUNDS
Indium gallium nitrides
INTERACTIONS
MODIFICATIONS
NANOPARTICLES
PHONONS
PHOTOLUMINESCENCE
QUANTUM WELLS
RAMAN SPECTROSCOPY
SEMICONDUCTOR MATERIALS
SILVER
SURFACES
TEMPERATURE RANGE 0273-0400 K
VISIBLE RADIATION
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Summary:Surface plasmon enhanced GaN and InGaN quantum wells (QWs) show promise for use as room-temperature light emitters. The effectiveness of the plasmon enhancement, however, is limited by the strong electron/hole and longitudinal optical phonon coupling found in the III-V nitrides. The electron-phonon coupling within semiconductor QWs has been modified using silver nanoparticles embedded within the QWs. Direct evidence is provided for this change via confocal Raman spectroscopy of the samples. This evidence is augmented by Angle-dependent photoluminescence experiments which show the alteration of the electron-phonon coupling strength through measurement of the emitted phonon replicas. Together these demonstrate a direct modification of carrier-phonon interactions within the system, opening up the possibility of controlling the coupling strength to produce high-efficiency room-temperature light emitters.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4894371