The effects of buffer layers on the performance and stability of flexible InGaZnO thin film transistors on polyimide substrates

We demonstrated the fabrication of flexible amorphous indium gallium zinc oxide thin-film transistors (TFTs) on high-temperature polyimide (PI) substrates, which were debonded from the carrier glass after TFT fabrication. The application of appropriate buffer layers on the PI substrates affected the...

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Bibliographic Details
Published in:Applied physics letters 2014-02, Vol.104 (6)
Main Authors: Ok, Kyung-Chul, Ko Park, Sang-Hee, Hwang, Chi-Sun, Kim, H., Soo Shin, Hyun, Bae, Jonguk, Park, Jin-Seong
Format: Article
Language:English
Subjects:
ANNEALING
Applied physics
Buffer layers
COMPARATIVE EVALUATIONS
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
Diffusion barriers
Diffusion layers
FABRICATION
Gallium
GALLIUM COMPOUNDS
GLASS
IMIDES
INDIUM COMPOUNDS
Indium gallium zinc oxide
LAYERS
ORGANIC POLYMERS
PHASE STABILITY
Radius of curvature
Semiconductor devices
SILICON OXIDES
Stability
SUBSTRATES
Thin film transistors
THIN FILMS
TRANSISTORS
Zinc oxide
ZINC OXIDES
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Summary:We demonstrated the fabrication of flexible amorphous indium gallium zinc oxide thin-film transistors (TFTs) on high-temperature polyimide (PI) substrates, which were debonded from the carrier glass after TFT fabrication. The application of appropriate buffer layers on the PI substrates affected the TFT performance and stability. The adoption of the SiNx/AlOx buffer layers as water and hydrogen diffusion barriers significantly improved the device performance and stability against the thermal annealing and negative bias stress, compared to single SiNx or SiOx buffer layers. The substrates could be bent down to a radius of curvature of 15 mm and the devices remained normally functional.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4864617