Trend of tunnel magnetoresistance and variation in threshold voltage for keeping data load robustness of metal–oxide–semiconductor/magnetic tunnel junction hybrid latches

The robustness of data load of metal–oxide–semiconductor/magnetic tunnel junction (MOS/MTJ) hybrid latches at power-on is examined by using Monte Carlo simulation with the variations in magnetoresistances for MTJs and in threshold voltages for MOSFETs involved in 90 nm technology node. Three differe...

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Bibliographic Details
Published in:Journal of applied physics 2014-05, Vol.115 (17)
Main Authors: Ohsawa, T., Ikeda, S., Hanyu, T., Ohno, H., Endoh, T.
Format: Article
Language:English
Subjects:
COMPARATIVE EVALUATIONS
Computer memory
Computer simulation
COMPUTERIZED SIMULATION
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
ELECTRIC POTENTIAL
HETEROJUNCTIONS
INTERFACES
Latches
MAGNETORESISTANCE
Magnetoresistivity
MONTE CARLO METHOD
Monte Carlo simulation
MOSFET
MOSFETs
Random access memory
RANDOMNESS
Robustness
SILICON OXIDES
SPIN
Threshold voltage
TORQUE
TUNNEL EFFECT
Tunnel junctions
Tunnel magnetoresistance
VARIATIONS
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Summary:The robustness of data load of metal–oxide–semiconductor/magnetic tunnel junction (MOS/MTJ) hybrid latches at power-on is examined by using Monte Carlo simulation with the variations in magnetoresistances for MTJs and in threshold voltages for MOSFETs involved in 90 nm technology node. Three differential pair type spin-transfer-torque-magnetic random access memory cells (4T2MTJ, 6T2MTJ, and 8T2MTJ) are compared for their successful data load at power-on. It is found that the 4T2MTJ cell has the largest pass area in the shmoo plot in TMR ratio (tunnel magnetoresistance ratio) and Vdd in which a whole 256 kb cell array can be powered-on successfully. The minimum TMR ratio for the 4T2MTJ in 0.9 V 
ISSN:0021-8979
1089-7550
DOI:10.1063/1.4867129