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Silicon buried gratings for dielectric laser electron accelerators
This paper describes design and simulations of dielectric laser electron accelerators that achieve Gigavolt-per-meter (GV/m) accelerating gradients and wide electron channels (>1 μm). The accelerator design is based on a silicon buried grating structure that enables flexible phase synchronization...
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Published in: | Applied physics letters 2014-05, Vol.104 (18) |
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Main Authors: | , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | This paper describes design and simulations of dielectric laser electron accelerators that achieve Gigavolt-per-meter (GV/m) accelerating gradients and wide electron channels (>1 μm). The accelerator design is based on a silicon buried grating structure that enables flexible phase synchronization, large electron channel fields, and low standing-wave ratio in the material. This design increases the accelerating gradients to more than double those of reported quartz grating accelerators, thereby reducing the input laser fluence by 60% for the same accelerating gradient. With a 100 fs pulsed laser, our silicon buried gratings can achieve a maximum gradient of 1.1 GV/m, indicating that these accelerators have potential for numerous electron-accelerator applications. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.4875957 |