Investigation of leakage current paths in n-GaN by conductive atomic force microscopy

Investigation of leakage current paths in n-GaN by conductive atomic force microscopy

We have investigated electrical characteristics of leakage current paths in n-GaN layer grown by metal-organic chemical vapor deposition with conductive-atomic force microscopy (C-AFM). The C-AFM mapping shows two kinds of leakage current paths existing in the n-GaN layer: open-core dislocation and...

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Bibliographic Details
Published in:Applied physics letters 2014-03, Vol.104 (10)
Main Authors: Kim, Bumho, Moon, Daeyoung, Joo, Kisu, Oh, Sewoung, Lee, Young Kuk, Park, Yongjo, Nanishi, Yasushi, Yoon, Euijoon
Format: Article
Language:eng
Subjects:
Applied physics
ATOMIC FORCE MICROSCOPY
CHEMICAL VAPOR DEPOSITION
GALLIUM NITRIDES
LEAKAGE CURRENT
MATERIALS SCIENCE
Metalorganic chemical vapor deposition
Microscopes
Microscopy
Organic chemicals
Organic chemistry
ORGANOMETALLIC COMPOUNDS
OXYGEN
SCREW DISLOCATIONS
SEGREGATION
Volt-ampere characteristics
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Summary:We have investigated electrical characteristics of leakage current paths in n-GaN layer grown by metal-organic chemical vapor deposition with conductive-atomic force microscopy (C-AFM). The C-AFM mapping shows two kinds of leakage current paths existing in the n-GaN layer: open-core dislocation and pure screw dislocation. From the localized I-V curves measured by C-AFM, we confirmed that the open-core screw dislocation shows more significant leakage current. We explained these results in terms of a modified Schottky band model based on donor states formed by oxygen segregation at the {10−10} sidewall of the open-core screw dislocation.
ISSN:0003-6951
1077-3118