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Structure and scintillation yield of Ce-doped Al–Ga substituted yttrium garnet
[Display omitted] ► Range of Y3(Al1−xGax)5O12:Ce solid solution crystals are grown from melt by the Czochralski method. ► Light yield of mixed crystals reaches 130% of the YAG:Ce value at x∼0.4. ► ∼1% of antisite defects is formed in YGG:Ce, but no evidence of this is obtained for the rest of crysta...
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Published in: | Materials research bulletin 2012-11, Vol.47 (11), p.3249-3252 |
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Main Authors: | , , , , , , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | [Display omitted]
► Range of Y3(Al1−xGax)5O12:Ce solid solution crystals are grown from melt by the Czochralski method. ► Light yield of mixed crystals reaches 130% of the YAG:Ce value at x∼0.4. ► ∼1% of antisite defects is formed in YGG:Ce, but no evidence of this is obtained for the rest of crystals.
Structure and scintillation yield of Y3(Al1−xGax)5O12:Ce solid solution crystals are studied. Crystals are grown from melt by the Czochralski method. Distribution of host cations in crystal lattice is determined. Quantity of antisite defects in crystals is evaluated using XRD and atomic emission spectroscopy data. Trend of light output at Al/Ga substitution in Y3(Al1−xGax)5O12:Ce is determined for the first time. Light output in mixed crystals reaches 130% comparative to Ce-doped yttrium–aluminum garnet. Luminescence properties at Al/Ga substitution are evaluated. |
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ISSN: | 0025-5408 1873-4227 |
DOI: | 10.1016/j.materresbull.2012.08.004 |