Phosphorus doping of 4H SiC by liquid immersion excimer laser irradiation

Phosphorus doping of 4H SiC is performed by KrF excimer laser irradiation of 4H SiC immersed in phosphoric acid. Phosphorus is incorporated to a depth of a few tens of nanometers at a concentration of over 1020/cm3 without generating significant crystal defects. Formation of a pn junction diode with...

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Bibliographic Details
Published in:Applied physics letters 2013-02, Vol.102 (5)
Main Authors: Ikeda, Akihiro, Nishi, Koji, Ikenoue, Hiroshi, Asano, Tanemasa
Format: Article
Language:English
Subjects:
BEAMS
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
CRYSTAL DEFECTS
DEPTH
Diodes
Doping
Excimer lasers
HALL EFFECT
IRRADIATION
JUNCTION DIODES
KRYPTON FLUORIDE LASERS
LIQUIDS
MATERIALS SCIENCE
PHOSPHORIC ACID
Phosphorus
PHOSPHORUS ADDITIONS
SEMICONDUCTOR MATERIALS
Silicon carbide
SILICON CARBIDES
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Summary:Phosphorus doping of 4H SiC is performed by KrF excimer laser irradiation of 4H SiC immersed in phosphoric acid. Phosphorus is incorporated to a depth of a few tens of nanometers at a concentration of over 1020/cm3 without generating significant crystal defects. Formation of a pn junction diode with an ideality factor of 1.06 is demonstrated.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4790621